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      • Chenglu Lin
        Vol. 10, Issue 1, (1987)
        摘要：New annealing methods of ion implanted semiconductors can be broadly classified into three categories: adiabatic annealing, thermal flux annealing and rapid thermal annealing. In recent years, by using these methods, we have been investigating laser annealing of ion implantation damage, laser alloying to the formation of an ohmic contact between GaAs and AuGeNi, and laser recrystallization of polyerystalline semiconductor films on insulating substrates. In this paper, we focus on the discussion of rapid thermal annealing of BF2+ implanted Si using RF graphite heater and CW Ar+ laser recrystallization of InP films on oxidized Si substrate.  
        关键词：rapid thermal annealing;ion implanted semiconductors;SOI technology;InP   
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        发布时间：2022-08-16
      • Zhenxia Wang,Zhenlan Tao,Liping Zheng,Dexin Cao,Miao Chen,Zuyao Zhou
        Vol. 10, Issue 1, (1987)
        摘要：Measurements of angular distribution of atoms sputtered from copper, gold element samples and Cu0.7Au0.3 alloy samples by 27 keV argon ions irradiation are reported. The following results are noteworthy: (1) All angular distributions were over cosine. The exponent, n, in fitting functions of the from connθ, was obtained, n=1.56 and 1.61 for copper and gold samples, and n=1.78 for Cu0.7Au0.3 alloy samples respectively; (2) The angular distributions of the component atoms sputtered from Cu0.7Au0.3 alloy showed that the copper ejected was preferential.  
        关键词：Sputtering;Angular distribution;preferential ejecting   
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        发布时间：2022-08-16
      • Heming Chen,Chunlai Ma,Xinde Bai,Qingming Chen,Zhigang He,Jiayou Feng,Zhuchun. Zhang
        Vol. 10, Issue 1, (1987)
        摘要：A series of results in the studies of aqueous solution corrosion, high temperature oxidation and anodic oxidation with ion beam technology since 1979 are introduced in this paper. The results show that ion beam technology not only can be used as a new corrosion resistance technology modifying the surfaces of metals, but also can provide a powerful method studying the corrosion inherent law and the corrosion mechanism.  
        关键词：Ion beam technology;Corrosion;Oxidation   
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        发布时间：2022-08-16
      • Yi Li,Yinnong Lin,Jianbo Zhang,Zhonglie Wang
        Vol. 10, Issue 1, (1987)
        摘要：During the procedure of ion-beam mixing, the temperature field will emerge in the target of solid (metal, insulator and semiconductor); therefore, there will be a cross effect of diffusion, thermal diffusion and chemical reaction. This paper phenome-noiogically describes the cross effect with the method of non-equilibrium statistical thermodynamics and gives the differential equations and relevant boundary conditions with regard to the procedure.  
        关键词：ion-beam mixing;Diffusion;thermal diffusion;chemical reaction;cascade collisions mixing;radiation-enhanced diffusion mixing;chemical driving force   
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        发布时间：2022-08-16
      • Zhaomin Hu,Weiguo Zhang,Fengying Liu,Tongyi Shao,Xuyang Xiang,Fengqin Gao,Gongpan Li
        Vol. 10, Issue 1, (1987)
        摘要：Five kinds of rare earth elements have been implanted into steel No. 45 and GCr15 bearing steel respectively. The corrosion resistances of the specimens have been examined using electrochemical dynamic potential method, in a NaAc/HAc solution for steel No. 45 specimens and in a NaAc/HAc solution containing 0.1mol/1 NaC1 for GCr15 bearing steel specimens. It has been found that the aqueous solution corrosion resistances of steel No. 45 are obviously modified by implantation of RE element, and the pitting corrosion properties of GCr15 bearing steel are significantly improved due to heavy RE element implantation.  
        关键词：Rare earth;Ion implantation;Corrosion;pitting corrosion   
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        发布时间：2022-08-16
      • Mian Zhou,Shangheng Xin,Changxin Shi
        Vol. 10, Issue 1, (1987)
        摘要：This paper presents a technique of Si, Be dual implantation into semi-insulating GaAs to form a p-type buried layer under a n-type active layer.Theoretical and experimental results verify that it is possible to suppress the effect of the n-type implanted profile tail in the region of the semi-insulating substrate interface using the proper p-type buried layer.  
        关键词：GaAs;Si+Be+ion implantation   
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        发布时间：2022-08-16
      • Tingqing Zhang,Jianmin Ren,Jialu Liu,Jinwei Chui,Yan Wang
        Vol. 10, Issue 1, (1987)
        摘要：CMOS IC plays a very important role in LSI and VLSI. The understanding of ion-implantation impurity distribution and redistribution in channel and p- well will be meaningful for guiding IC technology and improving circuit functions.This paper discusses models of ion-implantation, diffusion, oxidation and segregation which are used in computer simulation for low-dose implantation process, and gives some simulation results and measurements for comparison as well.  
        关键词：p- well;channel;Ion-implantation;Computer simulation   
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        发布时间：2022-08-16
      • Accelerator Laboratory of Beijing Machinery-Electricity Institute
        Vol. 10, Issue 1, (1987)
        摘要：The CG-100 high current ion implanter consists of an ion source, an analyzing magnet, an accelerating tube and a target chamber with mechanical scanning. The beam current on the target is larger than 1.0 mA, 3.0 mA, >1.0 mA for B+ , N+ and Pb+ , respectively. The beam energy is 40—100 keV. The ion mass which the analyzing magnet can deflect is up to 240 amu. The implanting uniformity is better than 94%. The temperature of target disk is lower than 250℃ at beam power of 200 W (2 mA×100 keV). This is a high current ion implanter for the surface modification of materials.  
        关键词：Ion source;Ion implanter;analyzing magnet;implanting uniformity;Accelerating tube   
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        发布时间：2022-08-16
      • Shichang Cheng,Hui Zhang,Shizhu Liu,Gaohong Ling
        Vol. 10, Issue 1, (1987)
        摘要：amorphous carbon films are formed from benzene vapour using inductive-couple type radio-frequency (RF) plasma. Substrates are n- and p-type single crystal silicon. ТЕМ, STMS and IR spectroscopy are used for analysis of the structure and composition of the carbon films. Electric and optical properties of the films are investigated by other methods. Experimental results indicate that the bias voltage, RF power and the partial pressure of benzene vapour all evidently affect the behaviour of the carbon films. If the bias voltage is higher than 700 V, a transparent a-C:H films of high resistivity and high hardness will be formed. RF power has an influence upon the refractive index of the carbon films, it is between 1.9—2.1.  
        关键词：RF plasma;amorphous carbon films   
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        发布时间：2022-08-16
      • Zhaokui Xiong,Peiguang Xu,Dezhi Wang,Sixiao Zheng,Xigang Lin
        Vol. 10, Issue 1, (1987)
        摘要：An enriched nitrogen layer on the surface of high speed steel W18Cr4V was formed by nitrogen ion implantation.In the X-ray photoelectron spectroscopy of the layer the Fe2N and Fe4N phases with high hardness were found. The microhardness and wear resistance of the high speed W18Cr4V were increased.In industrial production the wear resistance and durability of the ion implantation cutting tools were doubled. Owing to the implantation the improvement in durability of a cutting tool can last for its whole service life. The ion implantation technique has good prospects in application to cutting tools.  
        关键词：Ion implantation;cutting tool;Wear resistance;durability   
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        发布时间：2022-08-16
      • Ping Zhou,Peiguang Xu
        Vol. 10, Issue 1, (1987)
        摘要：Two new methods of ion implantation were adopted in comparison with nitrogen implantation: carbon monoxide was implanted directly into W18Cr4V steel, and nitrogen was implanted into a deposited titanium film about 1000 Å thick. It is shown that higher surface hardness and wear resistance have been achieved. The composition and phase structure of the implanted layer was determined in detail. The wear mechanisms were discussed.  
        关键词：Ion implantation;Wear resistance;Hardness   
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        发布时间：2022-08-16
      • Yumin Zhao,Zhenxi Wang,Zhongren Zhao,Jiarui Liu,Junsi Zhou,Baoshan Yang,Daru Zhao,Wenhao Luo
        Vol. 10, Issue 1, (1987)
        摘要：The structure changes in ion implanted Permalloy have been observed by RHEED and XPS. Amorphous phase and metal compound are formed in the surface layer. Magnetic property, mechanical property and surface roughness of the ion implanted samples and frequency response of the ion implanted magnetic head have been measured. The experimental results show that the hardening layer could be formed on the surface of an implanted sample without any degradation of the magnetic property.  
        关键词：Ion implantation;Permalloy;magnetic head   
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        发布时间：2022-08-16
      • Tonghe Zhang,Shusheng He,Diantong Lu,Qingcheng Zeng
        Vol. 10, Issue 1, (1987)
        摘要：The recoil oxygen profiles which were caused by As ions implanted through the film of SiO2 were calculated. The energies of the ions are 50 keV, 100 keV and 140 keV. The thicknesses of SiO2 are 200 Å, 450 Å and 650 Å respectively. The recoil oxygen profiles of B+ implanted through 200 Å thickness of SiO2 were calculated too. The results observed were compared with the calculations, and they matched well.The calculation proved that total oxygen in Si was maximum when the d=Rp was used in As ion implantation. But when the condition d≥3Rp was used. the total oxygen in Si of ion implantation was very little and negligible.  
        关键词：As implantation in SiO2;calculation of recoil oxygen;effects of recoil oxygen in Si;residual defects;energy of implantation;dense dislocation   
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        发布时间：2022-08-16
      • Xianzheng Pan,Xinming He,Bin Wang,Liqiu Zhang
        Vol. 10, Issue 1, (1987)
        摘要：The method of ion assisted vapour deposition (IAD or IVD) for preparing thin films is described in this paper. The comparison of the Ag/Si thin film prepared by IVD with those prepared by conventional vacuum vapour deposition have been made. The interface ion mixing of Ag-Si, and the surface microstructure of the Ag/Si thin films are measured by RBS, TЕМ SEM etc.  
        关键词：ion assisted deposition;Ag/Si thin film   
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        发布时间：2022-08-16
      • Peilu Wang,Wenshu Han,Yuanru Chen,Zhongyang Liu,Yirong Wang,Jin Chen
        Vol. 10, Issue 1, (1987)
        摘要：The technological process of implanting certain elements. such as Cr, Ti, Mo and Cr+Ni, etc. into No.45 steel separately by means of ion beam mixing was deseribed. The corrosion rate was measured by linear polarization method in 3% aerated NaCl solution. Anodic polarization curves were measured also by potentiodynamic scanning method in 0.5mol/1 H2SO4 and 3% NaCl solutions. The results obtained were compared each other and discussion was made.  
        关键词：Ion beam mixing;Alloy;Corrosion   
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        发布时间：2022-08-16
      • Fengsheng Zhou,Mingda Hua,Jianhua Peng
        Vol. 10, Issue 1, (1987)
        摘要：The structure and the electrical parameters including I—V, current—grid voltage, intensity of angular current, energy spread, beam noise and the characteristics of focus beam gun of a gallium liquid metal ion source have been described. It is evident that the emit ting current must be limited under 30 µA, if the micro-focus beam is going to be obtained.  
        关键词：characteristics of controlling grid;energy spread;beam noise   
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        发布时间：2022-08-16
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