The CG-100 high current ion implanter

Accelerator Laboratory of Beijing Machinery-Electricity Institute

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The CG-100 high current ion implanter

更新时间：2022-08-16

- The CG-100 high current ion implanter
- Nuclear Techniques Vol. 10, Issue 1, (1987)
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- Published：1987-01
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Accelerator Laboratory of Beijing Machinery-Electricity Institute. The CG-100 high current ion implanter[J]. Nuclear techniques, 1987, 10(1): 26-28,61,62.
DOI：

Accelerator Laboratory of Beijing Machinery-Electricity Institute. The CG-100 high current ion implanter[J]. Nuclear techniques, 1987, 10(1): 26-28,61,62. DOI：

摘要

离子注入机经过20多年的发展，其主要技术指标已达较高水平。最近几年除了用于半导体掺杂的弱流机外，用于材料改性的强流机及用于超大规模集成电路研制的高能、超高能（MeV）注入机都有了较大的发展。

Abstract

The CG-100 high current ion implanter consists of an ion source

an analyzing magnet

an accelerating tube and a target chamber with mechanical scanning. The beam current on the target is larger than 1.0 mA

3.0 mA

1.0 mA for B

and Pb

respectively. The beam energy is 40—100 keV. The ion mass which the analyzing magnet can deflect is up to 240 amu. The implanting uniformity is better than 94%. The temperature of target disk is lower than 250℃ at beam power of 200 W (2 mA×100 keV). This is a high current ion implanter for the surface modification of materials.

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