Preparation and properties of amorphous carbon films on the crystal silicon substrates by RF plasma

Shichang Cheng; Hui Zhang; Shizhu Liu; Gaohong Ling

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Preparation and properties of amorphous carbon films on the crystal silicon substrates by RF plasma

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- Preparation and properties of amorphous carbon films on the crystal silicon substrates by RF plasma
- Nuclear Techniques Vol. 10, Issue 1, (1987)
- 作者机构：
  
  武汉大学
- 作者简介：
- 基金信息：
- DOI：
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- Published：1987-01
- 稿件说明：
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Shichang Cheng, Hui Zhang, Shizhu Liu, et al. Preparation and properties of amorphous carbon films on the crystal silicon substrates by RF plasma[J]. Nuclear techniques, 1987, 10(1): 29-32,62.
DOI：

Shichang Cheng, Hui Zhang, Shizhu Liu, et al. Preparation and properties of amorphous carbon films on the crystal silicon substrates by RF plasma[J]. Nuclear techniques, 1987, 10(1): 29-32,62. DOI：

摘要

由离子和离子束技术形成的非晶碳膜具有良好的电绝缘性、对红外及可见光透明、硬度大、耐腐蚀等优良性质，可望在半导体器件、激光器件、太阳电池和材料保护等方面得到应用而受到重视。近年来很多作者先后报道了用未经质量分析的低能碳离子束直接沉积

、离子束溅射沉积

[3]

、离子镀

[4]

、射频辉光放电离化碳氢化合物的等离子体沉积

、经质量分析的低能碳离子束沉积

[7]

等方法在单晶硅、玻璃、不锈钢等不同衬底上形成非晶碳膜的结果。碳膜的物理性质与沉积条件有密切关系，根据物理性质非晶碳膜大致可以分为三类，即导电、不透明的类石墨膜；绝缘、透明、质软的类聚合物膜；透明、绝缘、硬度大的类金刚石膜。

Abstract

amorphous carbon films are formed from benzene vapour using inductive-couple type radio-frequency (RF) plasma. Substrates are n- and p-type single crystal silicon. ТЕМ

STMS and IR spectroscopy are used for analysis of the structure and composition of the carbon films. Electric and optical properties of the films are investigated by other methods. Experimental results indicate that the bias voltage

RF power and the partial pressure of benzene vapour all evidently affect the behaviour of the carbon films. If the bias voltage is higher than 700 V

a transparent a-C:H films of high resistivity and high hardness will be formed. RF power has an influence upon the refractive index of the carbon films

it is between 1.9—2.1.

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Keywords

references

S. Aisenberg and R. Chabot , J. Appl. Phys. , 42 , 2953 ( 1971 ).

E. G. Spencer et al. , Appl. Phys. Lett. , 29 , 118 ( 1976 ).

Bruce A. Banks and Shayon K. Rutledge , J. Vac. Sci. Technol , 21 , 807 ( 1982 ).

C. Weissmantal et al. , Thin Solid Films , 63 , 315 ( 1979 ).

L. Holland and S. M. Ojha , ibid , 58 , 107 ( 1979 ).

L. P. Andersson et al. , ibid , 63 , 155 ( 1979 ).

T. Miyazawa et al. , J. Appl. Phys. , 55 , 1 , 188 ( 1984 ).

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