New annealing methods of ion implanted semiconductors can be broadly classified into three categories: adiabatic annealing

thermal flux annealing and rapid thermal annealing. In recent years

by using these methods

we have been investigating laser annealing of ion implantation damage

laser alloying to the formation of an ohmic contact between GaAs and AuGeNi

and laser recrystallization of polyerystalline semiconductor films on insulating substrates. In this paper

we focus on the discussion of rapid thermal annealing of BF

2

+

implanted Si using RF graphite heater and CW Ar

+

laser recrystallization of InP films on oxidized Si substrate.