Si, Be dual implantation into SI—GaAs

Mian Zhou; Shangheng Xin; Changxin Shi

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Si, Be dual implantation into SI—GaAs

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- Si, Be dual implantation into SI—GaAs
- Nuclear Techniques Vol. 10, Issue 1, (1987)
- 作者机构：
  
  上海交通大学大规模集成电路微细加工研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1987-01
- 稿件说明：
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Mian Zhou, Shangheng Xin, Changxin Shi. Si, Be dual implantation into SI—GaAs[J]. Nuclear techniques, 1987, 10(1): 19-21,61.
DOI：

Mian Zhou, Shangheng Xin, Changxin Shi. Si, Be dual implantation into SI—GaAs[J]. Nuclear techniques, 1987, 10(1): 19-21,61. DOI：

摘要

GaAs集成电路要求FET有一致的夹断特性，而半绝缘GaAs衬底的质量对Si全离子注入的MESFET有着重大影响。这是由于高阻衬底中的Cr在离子注入和高温退火后的再分布，注入后载流子分布出现翘尾，使部分器件呈现出异常输出特性，表现为夹断电压偏高，小电流时跨导偏低，难以获得均匀的夹断电压。在N型有源层之下，用离子注入工艺形成一个隐埋的P型层，可以大大改善夹断电压的均匀性

[1]

。已有报道，通过在沟道层和衬底之间引入一P型层，亚微米栅GaAs MSFET的短沟道效应有效地被抑制了

[2]

，背栅效应对于GaAs集成电路无疑是有害的，模拟计算也表明，使用近补偿的衬底材料或缓冲层可使背栅沟道电容减至最小

[3]

。

Abstract

This paper presents a technique of Si

Be dual implantation into semi-insulating GaAs to form a p-type buried layer under a n-type active layer.

Theoretical and experimental results verify that it is possible to suppress the effect of the n-type implanted profile tail in the region of the semi-insulating substrate interface using the proper p-type buried layer.

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Keywords

references

梅本康成等，电子材料， 22 , 77 ( 1983 )。

K. Matsumoto et al. , 11th international symposium on GaAs and related compounds , 1984 .

C. Kocot and C. A. Stolte , IEEE Trans. Electr. Dev. , ED-29 , 1059 ( 1982 ).

王渭源等，砷化镓及有关化合物会议论文集 , 299 ( 1983 )。

程兆年等，物理学报， 31 , 922 ( 1982 )。

周勉和史常忻，半导体学报 , 6 , 4 , 433 ( 1985 )。

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