摘要:The N-channel MOSFETs fabricated on SIMOX wafers made by using multiple-implantation-and-annealing techniques are irradiated by 60Co gamma rays accumulatively. The subthreshold curves and threshold voltage shifts after irradiation at different bias conditions and doses are measured.The irradiation effects are compared with those of NMOS fabricated on bulk silicon, showing that the total dose radiation tolerance of the former is inferior to the latter.The effects of trapped-oxide charge and interface traps on the threshold voltage shifts,and some methods to improve the radiation hardness of NMOS/SIMOX are discussed.
摘要:In this paper, corrections of a universal electronic stopping power equation for nonrelativistic heayy ions in solidS have been made.Some calculations of proton electronic stopping power are performed using the new equation for a variety of targets with different atomic nUmbers.The results are close to that of the TRIM program.
摘要:A sealed tube neutron generator with neutron yield more than 1.5×1010/s has been developed.Consisting of a demountable neutron tube,a high voltage source and a control unit, this device has been used in neutron radiography.
摘要:Mutagenic effects of Streptomyces ribosidificus,Streptomyces kanamyceticus and the phage-resistant culture of Streptomyces kanamyceticus induced by N+ and C+ ion implantation with different doses have been investigated.The experimental results show that the death rates of antibiotic-producers increase with the increase of ion implantation dose, and the form mutation of the antibiotic-producers is rather obvious. After N+ ion implantation,the titer units increase by 10%-25%, 5.2%12.1% and 2.1%-12.75% for the above three strains respectively; while after C+ion implantation the titer units increase by 10%-16.9%,1.05%-3.08% and 5%-20% respectively.The selected strains of Micromonospora echimospoora and Streptomyces kanamyceticus after N+ ion implantation have been used in the factory.The increase of production is 20% and 12.5% respectively, showing marked economic benefits are obtained.
摘要:The r.f.magnetyon spattering deposited C-SiC coatings on stainless steel surface are microanalysed by XRD and XPS before and after electron beam treatment,and the results are disscussed.
摘要:The Rutherford backscattering/channeling technique has been used to investigate the dependence of damage accumulation in GaAs implanted with 1MeV St+ at elevated temperature on the ion dose.Three different dose regions are observed. In the lower dose region from 5×1014 to 2×1015 ions/cm2,the accumulated damage is light and almost independent of the ion dose.In the intermediate region from 2×1015 to 1×1016 ions/cm2, a buried damaged layer under a lightly damaged surface is formed,and the damage accumulation increases rapidly with increasing dose.For the dose region higher than 1×1016 ions/cm2,the damage accumulation has a weak dependence on the ion dose.The related processes are briefly discussed according to the cascade collision and vacancy diffusion.
摘要:Presented is a method to form a crowded vertical PN.junction in the surface layer of a solar cell by ion implantation.After the processing the distance from the light-generated carrier to the PN junction is shortened and the collection efficiency of the cell is improved.A new type anti-irradiation solar cell has been developed.
摘要:Based on the theory of x-ray fluorescence analysis,two new terms of x-ray sampling,i.e."equivalent plane"and"equivalent source-sample distance",have been introduced,with which the influence of a rough rock surface on x-ray sampling can be equivalent to the influence of the changes of source-sample distance for a smooth rock surface.The ratio of the characteristic to scattered radiation has also been used as a basic parameter for the unevenness effect correction.The experiments with artificial rock models show that the average of deviation of the ratios of the characteristic to scattered radiation between rough artificial rock surface and smooth surface is less than 5% for roughness less than 10mm.on three sites of Sn,Mo and Pb-Zn deposits have given satisfactory results.
摘要:A spectrum-stabilization technique suitable for the portable X-ray fluorescence analyzer is presented.The technique is realized by monitoring the scattering spectrum and has been used in CD-4 portable microcomputerized X-ray fluorescence analyzers.The stability is good and the function of the analyzer is improved obviously.
摘要:The radiation hardness of GaAs Shottky barrier particle detectors has been tested. The leakage current at reverse voltage VR<-150V is lower than 125nA. After a 3MeV electron radiation of 500kGy, the leakage current is changed to 270nA at VR=-150V.It is a promising detector in both high energy and nuclear physics.
摘要:Uranium and thorium contents in fifty-one samples of Tri-coloured(San-cai)Horse of the Tang Dynasty have been determined by both neutron activation analysis and thick source α-counting method.The data of total alpha count rate from the thick source alpha counting method could be used for the estimation of annual dose.
摘要:The distribution of some trace elements in the liver slices of mice were determined by Micro-SPXRF and SPM.In this paper presented are the correlations of the measured trace elements (P,S,Cl,Ca,Mn,Fe,Cu,Zn and Pt)at different points,and the hierarchical cluster analysis for them. The results show that P has a strong positive correlation with S,and Pt has strong positive correlations with Cu,Zn and Fe.The related elements can be classified into two main clusters,one containing P and S,and the other including Pt,Cu,Zn and Fe.The possibilities and limitations of the two probes for the analysis of biological samples are discussed.