Total dose gamma ray irradiation characteristics of NMOS/SIMOX

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Total dose gamma ray irradiation characteristics of NMOS/SIMOX

更新时间：2021-04-09

- Total dose gamma ray irradiation characteristics of NMOS/SIMOX
- NUCLEAR TECHNIQUES Issue 6, (1995)
- 作者机构：
  
  1. 中国科学院上海冶金研究所信息功能材料国家重点实验室
  2. 江苏石油化工学院
  3. 中国科学院新疆物理研究所
  4. 中国科学院上海冶金研究所信息功能材料国家重点实验室江苏石油化工学院中国科学院新疆物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305
- Published：01 June 1995
- 稿件说明：
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[1]竺士炀,李金华,林成鲁,高剑侠,严荣良,任迪远.NMOS／SIMOX的γ射线总剂量辐照特性[J].核技术,1995(06):368-373.

Total dose gamma ray irradiation characteristics of NMOS/SIMOX[J]. Nuclear techniques, 1995, (6).
[1]竺士炀,李金华,林成鲁,高剑侠,严荣良,任迪远.NMOS／SIMOX的γ射线总剂量辐照特性[J].核技术,1995(06):368-373. DOI：

Total dose gamma ray irradiation characteristics of NMOS/SIMOX[J]. Nuclear techniques, 1995, (6). DOI：

摘要

对用多次注入与退火技术制成的ＳＩＭＯＸ材料制备的Ｎ沟ＭＯＳＦＥＴ进行了６０Ｃｏγ射线累积剂量辐照试验，测量了不同辐照偏置条件和辐照剂量下的亚阈特性曲线和阈值电压漂移。对ＮＭＯＳ／ＳＩＭＯＸ和ＮＭＯＳＩ体硅的辐照效应作了比较，结果表明前者抗总剂量辐照性能不如后者。对引起阈值电压漂移的两个因素（氧化层电荷和界面态电荷）和提高ＮＭＯＳ／ＳＩＭＯＸ抗辐照性能的几点措施进行了讨论．

Abstract

The N-channel MOSFETs fabricated on SIMOX wafers made by using multiple-implantation-and-annealing techniques are irradiated by 60Co gamma rays accumulatively. The subthreshold curves and threshold voltage shifts after irradiation at different bias conditions and doses are measured.The irradiation effects are compared with those of NMOS fabricated on bulk silicon

showing that the total dose radiation tolerance of the former is inferior to the latter.The effects of trapped-oxide charge and interface traps on the threshold voltage shifts

and some methods to improve the radiation hardness of NMOS/SIMOX are discussed.

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Xinjiang Technical Institute of Physics & Chemistry, the Chinese Academy of Sciences, Urumqi 830011, China) 2

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