摘要:An influence coefficient intensity correction model is presented for in situ analysis of various ores by using the X-ray fluorescence analyzer with a proportional counter as an X-ray probe. Some experiments carried out by the authors show that with this model the matrix effects can be largely reduced and several elements in a measurement can be determined quantitatively.
摘要:This paper deals with the r liation polymerization of acrylamide in solid state monitored by the 13C CPMAS method. The 13C CPMAS spectra of the irradiated acrylamide were assigned and the critical polymerisation dose was 1.1kGy in solid state.Information on the structure of the irradiated polymer and the movement of macromolecular links were obtained.
摘要:C-labelled p,p’-DDE was used to study the behavior of p,p’-DDE in " Fluvio Marine Yellow Loamy soil" under upland and flooded conditions at Hangzhou, the subtropical area in China. The dissipation of p,p’-DDE in the soil under upland condition is faster than flooded condition. The half-life of p,p’-DDE residue in soil is 43 days for flooded condition, and only 25 days for upland. There is no big difference in the distribution pattern of p,p’-DDE for both conditions. Most of 14C-p,p’-DDE residue is concentrated within the layer of 0-2cm in soil. The p,p’-DDE is very stable in soil in both cases, and 14C-p,p’-DDE still take about 90% of the total 14C-activity in the methanol extractable residue even 43 weeks after tyeatment.
摘要:For MoSx films deposited by ion beam assistance, the effect of bombarded ion species, deposition mode, substrate materials and humidity of of store environment etc on the properties of these films has been studied. Experimental results indicated that the effect of these factors on films can not be ignored both in.the film’s deposition and in uses.
摘要:The energy deposition process for swift charged psrticles (H+) in allotropic silicon film is discussed in detail with the two component assumption of energy loss.An energy-loss correction factor η(E,p)< 1 has been introduced into the Bethe-Bloch formula and by fitting the experimental data and the η(E,p) value is obtained. As a result, all of the experimental phenomena on the allotropic effect of energy loss can be explained.
关键词:Swift proton;Mass density effect;Two component theory
摘要:In this paper, the dynamics of the radiation initiated polymerization of tributyltin methacrylate was studied and a dynamics equation was given. The equation has shown that the polymerization proceeded with a radical mechanism. And a double-molecule reaction in the initiation process has been presented in accordance with the dynamics equation.
摘要:Y silicide thin films with good properties are prepared by using Y metallic ions implantation into silicon. The structure of the implanted layer is analysed by glancing incidence backscattering and channelled low angle omergence analysis. It is found that the implanted region consists of three layers with different lattice distortion density. The first layer is a continual polycrystal yttrium silicide layer with thickness of  ̄ 100nm to 120nm. Its lattice distortion ratios for fluxes of 25 μ A/cm2and 50μA/cm2 are 25% and 52%, respectively. The second layer is a high defect density region with thickness of 200nm. The third layer is a low lattice distortion density region with thickness of 120nm. The depth profiles of the Si to Y ratio provide important information for the study of Y silicide.
关键词:Low angle channelling analysis;Glacing backscattering;Y ions implantation into silicon;Multilsyer stricture
摘要:N-methyl-14C benzyl amine was prepared from benzyl amine through a sequence of trifluoroacylation,ionization, 14C-methylation and hydrolysis. N-methyl-14C benzyl nitrosamine was obtained by treating aqueous 14C-dialkylamine with NaNO2 and H2SO4. The radiochemical purity checked by radio-HPLC and.specific activity of the product was 99% and 9.2 × 1011Bq/mol respectively.
摘要:The characteristic X-rays of Na,Mg,S, Cl and O, which are considered as constituent elements of plant seeds, are measured with a St(Li) detector when penetrating several layers of Mylar or Capton films. The measured absorption coefficients for different energies are compared with the calculated ones based on the OCG program written by Berkeley group in 1989. The relative error is less than 30%. The range of the characteristic X-rays is estimated.
关键词:Low energy heavy ions;Characteristic X-ray;Mass absorption coefficient;Equivalent biological materials
摘要:A stack of polymide (Kapton/PI) films was irradiated with 22.5MeV/u high energy Ar-ions. The conductivity measurement and the ultraviolet-visible absorption spectra of the modified Kapton show that the conductivity and the absorbance increased and the absorption edge is gradually shifted from near UV to visible with the increasing of electronic energy loss in unit volume. It can be concluded that electronic energy loss plays a key role in polymer modification.
摘要:The Shanghai Free Electron Laser (SFEL) user facility currently under construction at Shanghai institute of Nuclear Research is a broadband free electron laser (FEL) facility. The design of the e-beam transport system is presented and the various considerations are discussed.
关键词:FEL;Beam transport system;Achromaticity;Isochronism
摘要:An auto-control system for the dynamitron is described. The OMRON C200H and software OMRON-LSS2000 are used for the PLC. The software PARAGON500 is used in the computer.This system is sample and reliable, and very suitable for the factories with malignant operating conditions.
摘要:Proton radiation responses of Si gate P and N channel fluorinated MOSFETs processed with H2+ O2 and dry O2 gate oxidation have been investigated. The data on threshold voltage and Ids-Vgs characteristics show that the radiation-induced oxide charges and interface stales can be restrained. The formation of Si-F bonds to substitute some weak bonds and strained bonds which easily become charge traps under irradiation and the relaxation of the Si/SiO2 interface stress by F atoms are considered to explain the experimental result.
关键词:Proton irradiation;Interface state;Oxide charge;MOSFET;Threshold voltage