CsPbI<sub>2</sub>Br薄膜的双源共蒸原位GIWAXS研究

张君瀚; 何丙辰; 苏圳煌; 王晨越; 符美荣; 高兴宇

doi:10.3724/j.0253-3219.2026.hjs.49.250073

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CsPbI₂Br薄膜的双源共蒸原位GIWAXS研究

同步辐射技术及应用 | 更新时间：2026-02-13

- CsPbI₂Br薄膜的双源共蒸原位GIWAXS研究
- An in situ GIWAXS study of dual-source co-evaporation of CsPbI₂Br thin films
- 核技术 2026年49卷第2期文章编号：020101
- 作者机构：
  
  1.中国科学院上海应用物理研究所上海 201800
  2.中国科学院大学北京 100049
  3.中国科学院上海高等研究院上海 201204
- 作者简介：
  
  张君瀚，男，1998年出生，2020年毕业于浙江工业大学，现为博士研究生，研究领域为光学
  高兴宇，E-mail：gaoxy@sari.ac.cn
- 基金信息：
  
  National Natural Science Foundation of China(12075303;11675252;U1632265)
- DOI：10.3724/j.0253-3219.2026.hjs.49.250073
  中图分类号： TL99
- 收稿：2025-02-20，
  
  修回：2025-03-17，
  
  纸质出版：2026-02-15
- 稿件说明：
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张君瀚,何丙辰,苏圳煌等.CsPbI₂Br薄膜的双源共蒸原位GIWAXS研究[J].核技术,2026,49(02):020101.

ZHANG Junhan,HE Bingchen,SU Zhenhuang,et al.An in situ GIWAXS study of dual-source co-evaporation of CsPbI₂Br thin films[J].NUCLEAR TECHNIQUES,2026,49(02):020101.
张君瀚,何丙辰,苏圳煌等.CsPbI₂Br薄膜的双源共蒸原位GIWAXS研究[J].核技术,2026,49(02):020101. DOI： 10.3724/j.0253-3219.2026.hjs.49.250073. CSTR： 32193.14.hjs.CN31-1342/TL.2026.49.250073.

ZHANG Junhan,HE Bingchen,SU Zhenhuang,et al.An in situ GIWAXS study of dual-source co-evaporation of CsPbI₂Br thin films[J].NUCLEAR TECHNIQUES,2026,49(02):020101. DOI： 10.3724/j.0253-3219.2026.hjs.49.250073. CSTR： 32193.14.hjs.CN31-1342/TL.2026.49.250073.

摘要

钙钛矿薄膜的制备工艺对薄膜质量及其器件性能有重要影响。利用同步辐射掠入射广角X射线散射（Grazing-Incidence Wide Angle X-ray Scattering，GIWAXS）原位监测钙钛矿薄膜的生长过程，对于优化制备工艺具有重要的指导意义。关于溶液法制备的钙钛矿薄膜，原位GIWAXS研究已取得显著的进展，然而真空蒸镀法却一直缺乏专门的原位表征系统。为此，开发了一款双源共蒸真空系统，该系统的真空度、运动精度、衍射接收角度等各项指标都满足同步辐射线站的GIWAXS原位实验要求。基于该系统，在上海光源衍射线站采用GIWAXS观测了基底温度分别为25 ℃和85 ℃时双源共蒸CsPbI

Br钙钛矿薄膜沉积、退火的过程。实验结果表明：基底预加热至85 ℃，有利于在沉积过程中先形成高结晶度的PbI

，从而在退火过程中促进钙钛矿的形成。在85 ℃基底上沉积后，380 ℃退火最终形成纯净且具有良好取向的黑相CsPbI

Br。相较于25 ℃基底，85 ℃基底钙钛矿的结晶质量有明显提升。该双源共蒸系统与X射线光电子能谱和紫外光电子能谱测试真空系统串联进行原位光电子能谱测量，结果证实了黑相CsPbI

Br的成功制备。该研究为优化钙钛矿蒸镀工艺提供了重要依据和新的思路。

Abstract

Background

Perovskite film fabrication techniques have a significant impact on film quality and device performance. While in situ synchrotron-based Grazing-Incidence Wide Angle X-ray Scattering (GIWAXS) has made significant progress in solution-processed perovskite films

the study of vacuum evaporation techniques still lacks a dedicated in situ characterization system.

Purpose

This study aims to investigate the crystallization process of dual-source co-evaporated CsPbI

Br perov

skite films using in situ GIWAXS.

Methods

Firstly

a customized dual-source co-evaporation vacuum system was developed for in situ GIWAXS experiments at synchrotron beamlines with vacuum level (6.7×10

-7

Pa)

motion precision (5 μm) and angular precision (0.01°). Then

this system was installed at the X-ray diffraction beamline of Shanghai Synchrotron Radiation Facility (SSRF) to investigate the CsPbI

Br perovskite film during its deposition at substrate temperatures of 25 ℃ or 85 ℃ followed by the annealing process. Finally

the fabricated films were characterized using in situ X-ray Photoelectron Spectroscopy (XPS) and Ultraviolet Photoelectron Spectroscopy (UPS) after the evaporation vacuum system interconnected with the photoemission vacuum system for analyzing their electronic structures.

Results

The GIWAXS measurements results reveal that preheating the substrate to 85 ℃ facilitated the formation of highly crystallized PbI

during deposition

with its diffraction intensity approximately twice that of the perovskite black-phase. After deposition on substrates at 85 ℃

an annealing at 380 ℃ successfully converts intermediate phases into pure black-phase CsPbI

Br with high preferential orientations. The perovskite films deposited on substrates at 85 ℃ show significantly enhanced perovskite diffraction peak intensity compared to those on substrates at 25 ℃.

Conclusions

The dual-source co-evaporation system developed in this study enables comprehensive in situ GIWAXS study of CsPbI

Br crystallization dynamics. Results of this study provide important guidance for optimizing the evaporation deposition process of large-area perovskite films for photovoltaic applications.

关键词

Keywords

references

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CsPbI2Br薄膜的双源共蒸原位GIWAXS研究

An in situ GIWAXS study of dual-source co-evaporation of CsPbI2Br thin films

DOI：10.3724/j.0253-3219.2026.hjs.49.250073

摘要

Abstract

关键词

Keywords

references

CsPbI₂Br薄膜的双源共蒸原位GIWAXS研究

An in situ GIWAXS study of dual-source co-evaporation of CsPbI₂Br thin films