发射极尺寸对双多晶自对准双极晶体管剂量率效应的影响

刘默寒; 陆妩; 贾金成; 施炜雷; 王信; 李小龙; 孙静; 郭旗; 吴雪; 张培健

doi:10.11889/j.0253-3219.2018.hjs.41.110502

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发射极尺寸对双多晶自对准双极晶体管剂量率效应的影响

核物理、交叉学科研究 | 更新时间：2021-05-19

- 发射极尺寸对双多晶自对准双极晶体管剂量率效应的影响
- Dependence of emitter size on dose rate effect of double polysilicon self-aligned bipolar transistors
- 核技术 2018年41卷第11期文章编号：110502
- 作者机构：
  
  1.中国科学院特殊环境功能材料与器件重点实验室新疆电子信息材料与器件重点实验室中国科学院新疆理化技术研究所乌鲁木齐 830011
  2.中国科学院大学北京 100049
  3.模拟集成电路国家重点实验室重庆 400060
- 作者简介：
  
  [ "刘默寒, 男, 1988年出生, 2015年新疆大学硕士毕业, 现为博士研究生, 主要从事电子器件低剂量率辐射损伤增强效应研究", "LIU Mohan, male, born in 1988, graduated from Xinjiang University with master's degree in 2015, doctoral student, focusing on enhanced low dose rate sensitivity on electronic devices" ]
  陆妩, E-mail:luwu@ms.xjb.ac.cnLU Wu, E-mail:luwu@ms.xjb.ac.cn
- 基金信息：
  
  模拟集成电路国家重点实验室基金(0C09YJTJ1503);国家自然科学基金(U1630141)
- DOI：10.11889/j.0253-3219.2018.hjs.41.110502
  中图分类号： TL82;O571.33
- 收稿日期：2017-10-20，
  
  修回日期：2018-05-09，
  
  纸质出版日期：2018-11-10
- 稿件说明：
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刘默寒, 陆妩, 贾金成, 等. 发射极尺寸对双多晶自对准双极晶体管剂量率效应的影响[J]. 核技术, 2018,41(11):110502

Mohan LIU, Wu LU, Jincheng JIA, et al. Dependence of emitter size on dose rate effect of double polysilicon self-aligned bipolar transistors[J]. Nuclear techniques, 2018, 41(11): 110502
刘默寒, 陆妩, 贾金成, 等. 发射极尺寸对双多晶自对准双极晶体管剂量率效应的影响[J]. 核技术, 2018,41(11):110502 DOI： 10.11889/j.0253-3219.2018.hjs.41.110502.

Mohan LIU, Wu LU, Jincheng JIA, et al. Dependence of emitter size on dose rate effect of double polysilicon self-aligned bipolar transistors[J]. Nuclear techniques, 2018, 41(11): 110502 DOI： 10.11889/j.0253-3219.2018.hjs.41.110502.

摘要

为了研究发射极尺寸对双多晶自对准NPN型双极晶体管电离辐射剂量率效应的影响，对不同发射极尺寸双多晶自对准NPN双极晶体管在高低剂量率辐照条件下进行了辐照实验，在实验数据基础上对其损伤特性以及损伤机理进行的分析表明，高低剂量率辐照下双多晶自对准工艺制备的NPN型双极晶体管都具有良好的抗电离辐照损伤能力，且低剂量率辐照损伤均大于高剂量率。同时，实验及理论分析结果都表明：双多晶自对准双极晶体管的抗辐照能力与发射极的周长面积比密切相关，发射极周长面积比越小，晶体管抗辐照能力越强，且在发射极宽度一定时，发射极条越长抗辐照能力越强。

Abstract

Background

As the state-of-the-art high speed bipolar complementary process

the high performance and speed analog integrated circuit making by double-polysilicon self-aligned (DPSA) technology has a wide application prospect in the extreme fields of space radio frequency (RF)/microwave communication.

Purpose

This study aims to investigate the response of high-and low-dose-rate irradiation on domestic double polysilicon self-aligned NPN transistors with different emitter sizes

analyze the dependence of emitter size on dose rate effect of DPSA NPN bipolar junction transistor (BJT).

Methods

The two different emitter size devices were irradiated to a maximum total ionizing dose level of 1 000 Gy(Si) under the high (0.5 Gy(Si)·s

-1

) and low (1×10

-4

Gy(Si)·s

-1

) dose rate. The electrical parameters including Gummel characteristics and direct current gain of the devices were measured with Keithley 4200-SCS semiconductor parameter analyzer removed from the irradiation room within 20 min at room temperature before and after each specified value of accumulated dose.

Results

The NPN DPSA bipolar transistors have good resistance to ionizing radiation damage under high and low dose rate irradiation

and the low dose rate irradiation damage is greater than the high dose rate. Meanwhile

the smaller the perimeter area ratio of the emitter

the smaller the transistor degradation.

Conclusions

The DPSA NPN BJT has a great tolerance of the ionizing radiation for the application of the extreme radiation environment

and the smaller perimeter area ratio it has

the better the performance of the tolerance.

关键词

Keywords

references

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Nowlin R N. Dissertation[D] Arizona: University of Arizona, 1993: 42-50.

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