CMOS APS光电器件单粒子效应重离子试验研究

张晨光; 安恒; 杨生胜; 苗育君; 薛玉雄; 曹洲

doi:10.11889/j.0253-3219.2018.hjs.41.110501

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CMOS APS光电器件单粒子效应重离子试验研究

核物理、交叉学科研究 | 更新时间：2021-05-19

- CMOS APS光电器件单粒子效应重离子试验研究
- Experimental study on single event effects for CMOS APS with heavy ions
- 核技术 2018年41卷第11期文章编号：110501
- 作者机构：
  
  兰州空间技术物理研究所真空技术与物理重点实验室兰州 730000
- 作者简介：
  
  [ "张晨光, 男, 1993年出生, 2014年毕业于北京航空航天大学, 工程师, 从事空间辐射效应及单粒子效应技术", "ZHANG Chenguang, male, born in 1993, graduated from Beihang University in 2014, engineer, focusing on space radiation effect and single-event effects" ]
  安恒, E-mail:ahllbl@126.comAN Heng, E-mail: ahllbl@126.com
- 基金信息：
- DOI：10.11889/j.0253-3219.2018.hjs.41.110501
  中图分类号： TL99
- 收稿日期：2018-06-26，
  
  修回日期：2018-07-29，
  
  纸质出版日期：2018-11-10
- 稿件说明：
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张晨光, 安恒, 杨生胜, 等. CMOS APS光电器件单粒子效应重离子试验研究[J]. 核技术, 2018,41(11):110501

Chenguang ZHANG, Heng AN, Shengsheng YANG, et al. Experimental study on single event effects for CMOS APS with heavy ions[J]. Nuclear techniques, 2018, 41(11): 110501
张晨光, 安恒, 杨生胜, 等. CMOS APS光电器件单粒子效应重离子试验研究[J]. 核技术, 2018,41(11):110501 DOI： 10.11889/j.0253-3219.2018.hjs.41.110501.

Chenguang ZHANG, Heng AN, Shengsheng YANG, et al. Experimental study on single event effects for CMOS APS with heavy ions[J]. Nuclear techniques, 2018, 41(11): 110501 DOI： 10.11889/j.0253-3219.2018.hjs.41.110501.

摘要

基于新型互补金属氧化物半导体有源像素传感器（Complementary Metal Oxide Semiconductor Active Pixel Sensor，CMOS APS）光电器件的内部结构特点，分析了重离子对CMOS APS光电器件的影响，以及CMOS APS光电器件的单粒子效应敏感性。结合CMOS APS光电器件的结构特点和辐射影响分析，形成了基于监测数据逻辑状态和图像"白点"相结合的测试方法。在此基础上，利用重离子加速器进行了单粒子效应模拟试验。试验结果表明：当重离子线性能量传输（Linear Energy Transition，LET）低于9.01 MeV·cm

·mg

-1

时，像素阵列没有出现扰动现象，仅是电荷在像素阵列的不断累积。同时，试验获得单粒子翻转（Single Event Upset，SEU）饱和截面对应的LET值约为42.0 MeV·cm

·mg

-1

。

Abstract

Background

Complementary Metal Oxide Semiconductor Active Pixel Sensor (CMOS APS) photoelectric device is widely used in satelite applications with radiation exposure.

Purpose

This study aims at the radiation effects of heavy ions on CMOS APS photoelectric devices and the sensitivity of single event effects.

Methods

The internal structure characteristics and radiation effect of CMOS APS were analyzed

and a test method based on the combination of monitoring data logic state and image "white point" was formed. Then

a single event effects simulation experiment was carried out using heavy ion accelerator.

Results & Conclusion

The results show that the pixel array is not disturbed when linear energy transition (LET) of heavy ion is below 9.01 MeV·cm

·mg

-1

only the charge is accumulated in the pixel array. Heavy ion LET corresponding to single event upset (SEU) saturation cross section is 42.0 MeV·cm

·mg

-1

关键词

Keywords

references

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