双极电压比较器高低剂量率辐照损伤特性

贾金成; 李小龙; 陆妩; 孙静; 王信; 刘默寒; 魏昕宇; 姚帅; 郭旗

doi:10.11889/j.0253-3219.2018.hjs.41.090202

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双极电压比较器高低剂量率辐照损伤特性

低能加速器技术、射线技术及应用 | 更新时间：2021-05-19

- 双极电压比较器高低剂量率辐照损伤特性
- Characteristics of high-and low-dose-rate radiation damage for bipolar voltage comparator
- 核技术 2018年41卷第9期文章编号：090202
- 作者机构：
  
  1.中国科学院新疆理化技术研究所中国科学院特殊环境功能材料与器件重点实验室乌鲁木齐 830011
  2.新疆电子信息材料与器件重点实验室乌鲁木齐 830011
  3.中国科学院大学北京 100049
- 作者简介：
  
  [ "贾金成, 男, 1987年出生, 2010年毕业于哈尔滨理工大学, 现为硕士研究生, 微电子学与固体电子学专业", "JIA Jincheng, male, born in 1987, graduated from Harbin University of Science and Technology in 2010, master student, major in microelectronics and solid-state electronics" ]
  陆妩, E-mail:luwu@ms.xjb.ac.cn LU Wu, E-mail:luwu@ms.xjb.ac.cn
- 基金信息：
  
  国家自然科学青年基金(11605283);中国科学院西部之光项目基金(2016-QNXZ-B-7)
- DOI：10.11889/j.0253-3219.2018.hjs.41.090202
  中图分类号： TL99
- 收稿日期：2017-04-03，
  
  修回日期：2017-12-10，
  
  纸质出版日期：2018-09
- 稿件说明：
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贾金成, 李小龙, 陆妩, 等. 双极电压比较器高低剂量率辐照损伤特性[J]. 核技术, 2018,41(9):090202

Jincheng JIA, Xiaolong LI, Wu LU, et al. Characteristics of high-and low-dose-rate radiation damage for bipolar voltage comparator[J]. Nuclear techniques, 2018, 41(9): 090202
贾金成, 李小龙, 陆妩, 等. 双极电压比较器高低剂量率辐照损伤特性[J]. 核技术, 2018,41(9):090202 DOI： 10.11889/j.0253-3219.2018.hjs.41.090202.

Jincheng JIA, Xiaolong LI, Wu LU, et al. Characteristics of high-and low-dose-rate radiation damage for bipolar voltage comparator[J]. Nuclear techniques, 2018, 41(9): 090202 DOI： 10.11889/j.0253-3219.2018.hjs.41.090202.

摘要

为研究双极电路在空间辐射环境下的损伤规律，对典型双极电压比较器进行不同偏置条件下

Co-γ高低剂量率辐照试验。结果表明：电压比较器的输入偏置电流、开环增益和输出低电平等参数在电离辐射环境下均发生不同程度的退化，且都表现出低剂量率辐射损伤增强效应。通过进一步分析比较器敏感参数的变化规律以及电路级的具体退化模式发现，偏置条件对于电压比较器的辐照损伤特性有很大影响。

Abstract

Background

Bipolar junction transistors (BJTs) in spacecraft may be damaged by ionizing radiation.

Purpose

This study aims to investigate the dose rate effect and the radiation response of the voltage comparator.

Methods

Typical bipolar voltage comparators LM339 of the same batch produced by Texas Instruments (TI) are irradiated by

Co-γ at high-and low-dose-rate under different bias conditions. Some parameters of the voltage comparator subjected to ionization radiation

such as input bias current

open loop gain and low-level output voltage

are observed. The changing law of sensitive parameters of voltage comparator and the concrete degradation mode in the circuit level are analyzed.

Results

The degradation in performance of voltage comparator corresponding to low rate dose irradiation exhibits more dramatically enhancement

i.e. enhanced low dose rate sensitivity.

Conclusions

The radiation response of the voltage comparator is severely affected by the bias conditions.

关键词

Keywords

references

D M Fleetwood , S L Kosier , R N Nowlin , . Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates . IEEE Transactions on Nuclear Science , 1994 . 41 ( 6 ): 1871 - 1883 . DOI: 10.1109/23.340519 http://doi.org/10.1109/23.340519 .

V S Pershenkov , V V Belyakov , A V Shalnov . Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures . IEEE Transactions on Nuclear Science , 1994 . 41 ( 6 ): 2593 - 2599 . DOI: 10.1109/23.340620 http://doi.org/10.1109/23.340620 .

E W Enlow , R L Pease , W Combs , . Response of advanced bipolar processes to ionizing radiation . IEEE Transactions on Nuclear Science , 1991 . 38 ( 6 ): 1342 - 1351 . DOI: 10.1109/23.124115 http://doi.org/10.1109/23.124115 .

R L Pease , P C Adell , B G Rax , . The effects of hydrogen on the enhanced low dose rate sensitivity (ELDRS) of bipolar linear circuits . IEEE Transactions on Nuclear Science , 2008 . 55 ( 6 ): 3169 - 3173 . DOI: 10.1109/TNS.2008.2006478 http://doi.org/10.1109/TNS.2008.2006478 .

R L Pease , M C Maher , M R Shaneyfelt , . Total-dose hardening of a bipolar-voltage comparator . IEEE Transactions on Nuclear Science , 2002 . 49 ( 6 ): 3180 - 3184 . DOI: 10.1109/TNS.2002.805404 http://doi.org/10.1109/TNS.2002.805404 .

L Dusseau , M F Bernard , J Boch , . Analysis of total-dose response of a bipolar voltage comparator combining radiation experiments and design data . IEEE Transactions on Nuclear Science , 2006 . 53 ( 4 ): 1910 - 1916 . DOI: 10.1109/TNS.2006.880950 http://doi.org/10.1109/TNS.2006.880950 .

J F Krieg , J L Titus , D Emily , . Enhanced low dose rate sensitivity (ELDRS) in a voltage comparator which only utilizes complementary vertical NPN and PNP transistors . IEEE Transactions on Nuclear Science , 1999 . 46 ( 6 ): 1616 - 1619 . DOI: 10.1109/23.819129 http://doi.org/10.1109/23.819129 .

马武英 , 陆妩 , 郭旗 , . 双极电压比较器电离辐射损伤及剂量率效应分析 . 物理学报 , 2014 . 63 ( 2 ): 026101 DOI: 10.7498/aps.63.026101 http://doi.org/10.7498/aps.63.026101 .

Wuying MA , Wu LU , Qi GUO , . Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator . Acta Physica Sinica , 2014 . 63 ( 2 ): 026101 DOI: 10.7498/aps.63.026101 http://doi.org/10.7498/aps.63.026101 .

王义元 , 陆妩 , 任迪远 , . 双极电压比较器不同条件下总剂量辐射效应 . 原子能科学技术 , 2012 . 46 ( 9 ): 1147 - 1152 . http://d.old.wanfangdata.com.cn/Periodical/yznkxjs201209022 .

Yiyuan WANG , Wu LU , Diyuan REN , . Total ionizing dose effect of bipolar voltage comparator . Atomic Energy Science and Technologe , 2012 . 46 ( 9 ): 1147 - 1152 . http://d.old.wanfangdata.com.cn/Periodical/yznkxjs201209022 .

马武英 , 陆妩 , 郭旗 , . 双极电压比较器低剂量率辐照损伤增强效应的变温辐照加速评估方法 . 原子能科学技术 , 2014 . 48 ( 11 ): 2170 - 2176 . DOI: 10.7538/yzk.2014.48.11.2170 http://doi.org/10.7538/yzk.2014.48.11.2170 .

Wuying MA , Wu LU , Qi GUO , . Accelerated evaluation method of temperature switching irradiation for ELDRS of bipolar voltage comparator . Atomic Energy Science and Technologe , 2014 . 48 ( 11 ): 2170 - 2176 . DOI: 10.7538/yzk.2014.48.11.2170 http://doi.org/10.7538/yzk.2014.48.11.2170 .

V S Pershenkov , V B Maslov , S V Cherepko , . The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices . Nuclear Science IEEE Transactions on , 1997 . 44 ( 6 ): 1840 - 1848 . DOI: 10.1109/23.658951 http://doi.org/10.1109/23.658951 .

V S Pershenkov , M S Chirokov , P T Bretchko , . The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs . IEEE Transactions on Nuclear Science , 1995 . 41 ( 6 ): 1895 - 1901 . http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=JJ0214285145 .

H P Hjalmarson , R L Pease , R A B Devine . Calculations of radiation dose-rate sensitivity of bipolar transistors . IEEE Transactions on Nuclear Science , 2008 . 55 ( 6 ): 3009 - 3015 . DOI: 10.1109/TNS.2008.2007487 http://doi.org/10.1109/TNS.2008.2007487 .

H P Hjalmarson , R L Pease , S C Witczak , . Mechanisms for radiation dose-rate sensitivity of bipolar transistors . Nuclear Science IEEE Transactions on , 2004 . 50 ( 6 ): 1901 - 1909 . DOI: 10.1109/TNS.2003.821803 http://doi.org/10.1109/TNS.2003.821803 .

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