GaN基LED高能电子束流辐照效应研究

刘超; 于莉媛; 王志刚; 钱森; 夏经铠; 朱纳; 高峰; 安广朋; 马毅超; 党宏社; 吴英蕾; 杨洁

doi:10.11889/j.0253-3219.2016.hjs.39.120503

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GaN基LED高能电子束流辐照效应研究

核物理、交叉学科研究 | 更新时间：2021-05-24

- GaN基LED高能电子束流辐照效应研究
- Investigation on the properties of GaN-LED irradiated by high-energy electron beam
- 核技术 2016年39卷第12期文章编号：120503
- 作者机构：
  
  1.天津工业大学天津 300387
  2.核探测与核电子学国家重点实验室北京 100049
  3.中国科学院高能物理研究所北京 100049
  4.中国科学院大学北京 100049
  5.陕西科技大学西安 710021
- 作者简介：
  
  [ "刘超, 男, 1989年出生, 2014年毕业于东南大学成贤学院, 现为硕士研究生, 研究领域为半导体辐照效应的研究", "LIU Chao, male, born in 1989, graduated from Southeast University Chengxian College in 2014, master student, focusing on the irradiation effect on semiconductor" ]
  钱森, E-mail:qians@ihep.ac.cn QIAN Sen, E-mail:qians@ihep.ac.cn
- 基金信息：
  
  国家自然科学青年基金(No.11305190);国家自然科学基金(No.11175198);国家自然科学基金(No.11475209);国家自然科学基金(No.11611130020);国家自然科学基金(No.11204211)
- DOI：10.11889/j.0253-3219.2016.hjs.39.120503
  中图分类号： TN312.8
- 收稿日期：2016-05-27，
  
  修回日期：2016-09-19，
  
  纸质出版日期：2016-12
- 稿件说明：
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刘超, 于莉媛, 王志刚, 等. GaN基LED高能电子束流辐照效应研究[J]. 核技术, 2016,39(12):120503

Chao LIU, Liyuan YU, Zhigang WANG, et al. Investigation on the properties of GaN-LED irradiated by high-energy electron beam[J]. Nuclear techniques, 2016, 39(12): 120503
刘超, 于莉媛, 王志刚, 等. GaN基LED高能电子束流辐照效应研究[J]. 核技术, 2016,39(12):120503 DOI： 10.11889/j.0253-3219.2016.hjs.39.120503.

Chao LIU, Liyuan YU, Zhigang WANG, et al. Investigation on the properties of GaN-LED irradiated by high-energy electron beam[J]. Nuclear techniques, 2016, 39(12): 120503 DOI： 10.11889/j.0253-3219.2016.hjs.39.120503.

摘要

使用高能电子辐照对GaN基蓝光发光二极管（Light Emitting Diode，LED）光电学性能的影响进行研究。高能电子束流分别对不同组别的LED样品进行辐照实验，并通过自动测控系统对辐照过程中LED的电流、光强、光谱峰值波长进行全程测控。随后，在室温无辐照环境下对上述不同组别的LED样品进行跟踪对比测试研究。实验结果表明，高能辐照对LED的改性有明显效果，具体表现在工作电流和发光功率变化时受辐照影响的稳定性有所改善，光谱峰值波长出现蓝移。同时，GaN基LED在辐照过程中是否通电对LED的光电学性能有显著影响。

Abstract

Background:

The performance of GaN-based light emitting diode (LED) will be affected by the gamma

neutron and electron radiation.

Purpose:

To study the impact of high-energy electron radiation on photoelectric properties of GaN-based LED

samples were setup in the beam line for electron radiation.

Methods:

The current

light power and emission wavelength of the irradiating LED were monitored by an automatic monitoring and control system during the beam time. And the aging tests of these LED samples were also finished.

Results:

The current

the light power stability of each sample were varied with different electron radiation. Also luminescence wavelength of some samples has a certain blue shift phenomenon.

Conclusion:

High-energy radiation has obvious effect on the photoelectric properties of the GaN-based LED.

关键词

Keywords

references

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