离子辐照GaAs的光致发光和拉曼散射研究

杨迪; 孙梦利; 袁伟; 杜鑫; 彭海波; 王铁山; 郭红霞

doi:10.11889/j.0253-3219.2016.hjs.39.100201

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离子辐照GaAs的光致发光和拉曼散射研究

低能加速器技术、射线技术及应用 | 更新时间：2021-05-24

- 离子辐照GaAs的光致发光和拉曼散射研究
- Study on photoluminescence and Raman scattering in GaAs by ion irradiation
- 核技术 2016年39卷第10期文章编号：100201
- 作者机构：
  
  1.兰州大学核科学与技术学院兰州 730000
  2.西北核技术研究所西安 710024
- 作者简介：
  
  [ "杨迪, 男, 1991年出生, 2014年毕业于兰州大学, 现为硕士研究生, 研究方向为半导体材料辐照效应", "YANG Di, male, born in 1991, graduated from Lanzhou University in 2014, master student, focusing on semiconductor materials irradiation effect" ]
  王铁山, E-mail:tswang@lzu.edu.cn WANG Tieshan, E-mail: tswang@lzu.edu.cn
- 基金信息：
  
  强脉冲辐射环境模拟与效应国家重点实验室（西北核技术研究所）专项经费资助项目()
- DOI：10.11889/j.0253-3219.2016.hjs.39.100201
  中图分类号： TL99
- 收稿日期：2016-05-26，
  
  修回日期：2016-07-13，
  
  纸质出版日期：2016-10
- 稿件说明：
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杨迪, 孙梦利, 袁伟, 等. 离子辐照GaAs的光致发光和拉曼散射研究[J]. 核技术, 2016,39(10):100201

Di YANG, Mengli SUN, Wei YUAN, et al. Study on photoluminescence and Raman scattering in GaAs by ion irradiation[J]. Nuclear techniques, 2016, 39(10): 100201
杨迪, 孙梦利, 袁伟, 等. 离子辐照GaAs的光致发光和拉曼散射研究[J]. 核技术, 2016,39(10):100201 DOI： 10.11889/j.0253-3219.2016.hjs.39.100201.

Di YANG, Mengli SUN, Wei YUAN, et al. Study on photoluminescence and Raman scattering in GaAs by ion irradiation[J]. Nuclear techniques, 2016, 39(10): 100201 DOI： 10.11889/j.0253-3219.2016.hjs.39.100201.

摘要

利用250 keV质子和4.5 MeV氪离子（Kr

17+

）辐照未掺杂GaAs，注量分别为1

#215;10

-3

#215;10

-2

和1

#215;10

-3

#215;10

-2

，使用光致发光谱和拉曼散射谱分析表征。发光谱的结果表明，随着剂量增大，质子辐照后的C

峰及其声子伴线逐渐减弱，913 nm处的复合缺陷峰则先增大后减小，此峰与材料制备时的Cu掺杂无关。Kr离子辐照后本征发光峰则完全消失。拉曼散射谱的结果表明，相比于质子辐照，Kr离子辐照后LO声子峰峰位向低频方向移动，出现非对称性展宽，晶体结构发生明显改变。质子和Kr离子辐照效应的差异是由于移位损伤相差至少三个量级造成的。最后采用多级损伤累积（Multi-step damage accumulation，MSDA）模型得到了材料内缺陷的演化过程，并很好地解释了随损伤剂量增大GaAs光学性能及晶体结构的变化趋势。

Abstract

Background:

GaAs is widely used as the second generation semiconductor material in the fields of aerospace and radiation detection.

Purpose:

Study of the irradiation effects of GaAs is of guiding significance for the evaluation of the radiation resistance of GaAs devices.

Methods:

Semi-insulating GaAs were irradiated by 250-keV H+ and 4.5-MeV Kr

17+

ions with fluences ranging respectively from 1

#215;1012 cm

-2

to 3

#215;1014 cm

-2

and 3

#215;1011 cm

-2

to 3

#215;1014cm

-2

. Photoluminescence (PL) spectrum and Raman scattering spectra were used to measure GaAs samples before and after irradiation.

Results:

PL spectrum shows that the intensity of C

peaks and phonon replicas decrease with increasing fluence of H+ irradiation. The IGa-VAs peak in 913 nm was increased at lower fluence and decreased at higher fluences. But all the peaks completely disappeared with Kr

17+

irradiation. The results of Raman spectra show that the longitudinal-optical (LO) phonon peak at 295-cm

-1

slides towards the low-frequency side and broadens its width asymmetrically by Kr

17+

irradiation

while it has no obvious change by proton irradiation.

Conclusion:

The difference between the effect of proton and Kr

17+

irradiation is due to the difference of the displacement damage by three orders of magnitude at least. The evolution process of damage defects in GaAs is obtained by using Multi-step damage accumulation (MSDA) model

and then the trends of optical properties and crystalline structure are well explained.

关键词

Keywords

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