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双吡咯烷酮为核的联噻吩衍生物SMDPPEH薄膜热退火过程中微结构变化的实时表征
Influence of thermal annealing on microcstructure of diketopyrrolopyrrole-containing oligothiophene (SMDPPEH) thin film
- 核技术 2016年39卷第2期 文章编号：020102
- 作者机构：
1.长春工业大学 化学工程学院 长春 130012;
2.嘉兴学院 材料和纺织工程学院 嘉兴 314001;
3.中国科学院长春应用化学研究所 高分子物理与化学国家重点实验室 长春 130022
- 作者简介：
杨丹,女,1989年出生,2013年毕业于吉林化工学院,现为长春工业大学硕士研究生,研究领域为高分子薄膜结晶形态
张吉东,E-mail:jdzhang@ciac.ac.cn
- 基金信息：
DOI：10.11889/j.0253-3219.2016.hjs.39.020102
中图分类号： TL99;O649.1;O694.5收稿日期：2015-11-11，
录用日期：2015-12-03，
纸质出版日期：2016-01-25
- 稿件说明：
移动端阅览
杨丹, 李海东, 张吉东. 双吡咯烷酮为核的联噻吩衍生物SMDPPEH薄膜热退火过程中微结构变化的实时表征[J]. 核技术, 2016,39(2):020102
Dan YANG, Haidong LI, Jidong ZHANG. Influence of thermal annealing on microcstructure of diketopyrrolopyrrole-containing oligothiophene (SMDPPEH) thin film[J]. Nuclear techniques, 2016, 39(2): 020102
杨丹, 李海东, 张吉东. 双吡咯烷酮为核的联噻吩衍生物SMDPPEH薄膜热退火过程中微结构变化的实时表征[J]. 核技术, 2016,39(2):020102 DOI： 10.11889/j.0253-3219.2016.hjs.39.020102.
Dan YANG, Haidong LI, Jidong ZHANG. Influence of thermal annealing on microcstructure of diketopyrrolopyrrole-containing oligothiophene (SMDPPEH) thin film[J]. Nuclear techniques, 2016, 39(2): 020102 DOI： 10.11889/j.0253-3219.2016.hjs.39.020102.
摘要
用旋涂法制备了双吡咯烷酮为核的联噻吩衍生物(Diketopyrrolopyrrole-containing Oligothiophene
SMDPPEH)薄膜
并采用紫外-吸收光谱和掠入射X射线衍射方法研究了热退火过程中的微结构变化。原位热退火的紫外-吸收光谱结果表明
100℃及以上时
第二个和第三个最大吸收峰发生蓝移。掠入射X射线衍射结果表明SMDPPEH薄膜在100℃左右退火时有相变产生
并且随退火温度升高
薄膜的结晶度在增大。相应处理后的SMDPPEH薄膜的紫外-吸收光谱和掠入射X射线衍射证明了SMDPPEH薄膜这个相变保留到了降温后的薄膜中。
Abstract
Background:
2
Thermal annealing will enhance the performance of diketopyrrolop
yrrole-containing oligothiophene (SMDPPEH) based solar cells. However
its mechanism is unclear.
Purpose:
2
We investigated the variation of SMDPPEH thin film during the thermal annealing.
Methods:
2
The SMDPPEH thin film was spin-coated from chlorobenzene solution and characterized by ultraviolet-visible spectrophotometry (UV-VIS) absorption spectra and grazing incidence X-ray diffraction (GIXRD).
Results:
2
The absorption maximum (
λ
max
) peaks of the annealed SMDPPEH thin film were at 100℃ and above blue-shifted. The GIXRD results exhibited that the intensities of (100) diffraction peaks were enhanced with increasing annealing temperatures and there was a small change in shape from dot to arc when annealing temperature was equal to or higher than 100℃ for SMDPPEH thin film.
Conclusion:
2
These results indicate that a phase transition is present in SMDPPEH when the annealing temperature is up to 100℃ and the crystallinity of all the films improved with the increase of annealing temperature.
关键词
Keywords
references
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