Background: The transient neutron radiation damage effect was an important parameter for evaluating radioresistance of electron device. Purpose: The aim is to obtain the response to transient irradiation of bipolar transistors under pulse neutron radiation. Methods: In this paper

the silicon bipolar transistors (3DK9D) with good similarity of parameters have been employed as the displacement damage monitors based on the liner relationship between the reciprocal of gain and the neutron flux. Response characteristic of pulse neutron radiation for this transistor was obtained by on-line measuring the variation of zero-frequency gain the along with accumulation of the neutron flux. Results: The transient neutron radiation damage effect on transistors was the combined action of ionizing damage and displacement damage. Conclusion: The results shown that the transient irradiation effect of transistors was more remarkable than steady irradiation with the same accumulative neutron flux. Abstract