Background: Flash memory is a critical part of electrical system on satellite

its characteristics of antiradiation is of great significance for system design. Purpose and Methods: we need to investigate the ionizing irradiation damage and sensitive parameters through testing date logic state

power current

output voltage level

leakage current and Alternating Current parameters. Results: Date logic state appears some errors along with increasing of total radiation dose. Also power current on reading

erasing and holding status increase as radiation dose rising. The failure level on dynamic bias is one-order-magnitude higher than that on static and no power biases. Logic state and power current are sensitive parameters through the experiment results. Conclusion: Results analysis and discussion on the radiation damage phenomenon would provide a theoretical basis and method on comprehensive radiation evaluation of flash memories. Abstract