Background: Studies of the radiation effects on the floating-gate flash memory have been mainly focused on functionality measurement.Purpose: According to the present situation

flash memory was irradiated and annealed by60Co γ rays

and the TID failure mechanism of the device was analyzed.Methods: The function parameters including DC and AC were measured using a large scale integrated circuit testing system.The range of radiation-sensitive parameters was extended using the Verigy 93000 instrument and the shmoo test.Results: The results showed that the maximum operating frequency was radiation-sensitive parameter which has a significant change in radiation and annealing.Conclusions: Under strong electric field

due to the accumulation of oxide trapped charge and interface trap charge

the performance of charge pump circuit was deteriorated and the function of device was failed.Annealing characteristics indicated that the oxide trapped charge accounts for a major role.