Background: Because of the damage induced by ionizing radiation

bipolar transistors in integrated voltage regulator could induce the current gain degradation and increase leakage current.This will bring serious problems to electronic system.Purpose: In order to ensure the reliability of the device work in the radiation environments

the device irradiation reinforcement technology is used.Methods: The characteristics of 60Co γ irradiation and annealing at different temperatures in bipolar transistors and voltage regulators(JW117) with different passive films for SiO 2 +BPSG+SiO 2 and SiO 2 +SiN have been investigated.Results: The devices with BPSG film enhanced radiation tolerance significantly.Because BPSG films have better absorption for Na + in SiO 2 layer

the surface recombination rate of base region in a bipolar transistor and the excess base current have been reduced.It may be the main reason for BJT with BPSG film having a good radiation hardness.And annealing experiments at different temperatures after irradiation ensure the reliability of the devices with BPSG films.Conclusions: A method of improving the ionizing irradiation hardness of bipolar transistors is proposed.As well as the linear integrated circuits which containing bipolar transistors

an experimental basis for the anti-ionizing radiation effects of bipolar transistors is provided.