Background: ZnO-based diluted magnetic semiconductors（DMSs） have attracted much attention for their potential applications in spintronics

which utilizes both the spin degree of freedom and electronic charge.After Dietl et al.theoretically predicted that ZnO doped with 5 at% Mn might exhibit room temperature ferromagnetism

most studies were focused on this system.The other transition metal such as Fe doped ZnO DMSs were rarely studied

especially

Fe and N codoped ZnO system.The thermal oxidation method

a very simple method

was used to prepare the ZnO:（Fe

N） films.First

Zn3N2: Fe films were grown by radio frequency（RF） reactive magnetron sputtering on quartz substrates and then annealed in oxygen atmosphere at different temperatures for 2 h.Purpose: This paper attempted to study annealing behavior and structural evolvement of Zn3N2:Fe at the different annealing temperature.Methods: Rutherford backscattering spectrometry（RBS） was a very powerful tool to study the growth of thin film.Therefore in this paper RBS combining with X-ray diffraction（XRD） was used to study the preparation of the ZnO:（Fe

N） films.Results: The results showed that the as-grown sample was Zn3N2:Fe film.After annealed at 300oC

Zn3N2:Fe in the surface had transformed to ZnO:（Fe

N） and the film under the surface was not oxidated.After annealed above 400oC

the Zn3N2:Fe film had entirely transformed to the polycrystalline ZnO:（Fe

N） film.Annealed at 500oC

the film started to diffuse into the substrate and at 600oC–700oC

the diffusion was very obvious.Conclusions: RBS combining with XRD can effectively study the preparation of the ZnO:（Fe

N） films.Within the range of the sensitivity

no precipitates such as Fe cluster or Fe3O4

Fe2O3 and FeO were observed by XRD.From SQUID

the maximum of the saturation magnetic moment（Ms） at room temperature appeared at 500oC.