Lin Chenglu Lin Zixin Zou Shichang. Influence of y-ray irradiation on electrical properties of MOS/SIMNI devices[J]. Nuclear techniques, 1991, (1): 13-16.
Lin Chenglu Lin Zixin Zou Shichang. Influence of y-ray irradiation on electrical properties of MOS/SIMNI devices[J]. Nuclear techniques, 1991, (1): 13-16.DOI:
SIMNI materials were produced by a N+ implantation(170keVt 1.8 × 1013/cm2)
high temperature annealing and vapor phase epitaxial growth process. MOS devices were fabricated on SIMNI and Ar+ laser recrystallized SOI materials respectively. The electrical properties and the radiation characteristics of these devices after 60Co γ-ray irradiation were compared.