? The 140keV H+ with a dose of 5×1016/cm2 was implanted into Si wafer at room temperature

leading to the formation of a bubble layer beneath the surface

and the annealing behavior of the bubbles was investigated by the Rutherford backscattering and channeling spectrometry

thermal wave analysis technology and microscopy It was found that

above a critical annealing temperature

blistering and flaking will occur at the surface of the implanted sample

and the density of flaking increases with the increasing of annealing temperature Below this temperature

the crystalline character of the top Si layer is not influenced by the bubbles The thermal wave analysis results indicate that the bottom of flaking area is irregular The blistering and flaking phenomena of the implanted samples were also discussed