amples of the 6H a-SiC crystal have been implanted with a variety of doses of silver ions from a MEVVA ion source at 50 kV potential and room temperature.Tests including microhardness measurements

SEM of indentations

Raman spectrography

RBS and XPS were carried out. The results indicate that the SiC crystal is changed from a brittle state into a ductile one by Ag ion implantation and an amorphous layer is formed at the surface of the implanted a-SiC sample. The lowest dose for the formation of amorphous state is about 1014-1015 Ag+/cm2. XPS of Ag3d5/2 for the sample implanted with 5 × 1016Ag+/cm2 shows that in the implanted layer of SiC

silver exists in a metallic state. According to the features of the MEVVA ion source which produces multiple charged silver ions

the present results are discussed and compared with those from literatures.