At room temperature

the proton enhanced backscattering technique and scanning electron microscopy are used to study the behaviour of implanted helium in titanium forget with different manufacturing process and alumina with different purity. The result proves that adhesion of the titanium film Prepared by ion.beam enhanced deposition（BED） is superior to that of the film made by vaporization.The release mechanism of helium in titanitum target and alumina is different.Compared with the titanium target made by IBED

helium in alumina is difficult to form bubbles.For titanium target

the implanted He dose for blistering is 4×1017-7×1017He/cm2

and this dose is very close to the dose value that makes flabes.