Al films with a thickness of 700nm（containing 0.85wt% Cu） were deposited on <100> Si substrates. 400keV N or 350keV N ions with doses ranging from 4.3×1017 to 1.5 × 10

18N/cm2 were implanted into the Al films or at the interface between Al and Si

respectively. Automatic spreading resistance

RBS and channelling and Infrared Spectroscopy were used to characterize the formation of AlN and the depth distribution of Cu impurity in the Al films oher ion implantation and post- annealing.The formation of a stoichiometric AlN layer was evident from the ASR

RBS and IR analysis by the Presence of the absorption band at 650cm-1. Segregation of Cuimpurity into the AlN was enhanced during ion implantation by point defects generated by the N+ ion beam.