Gao Wenyu Ren Diyuan Lu Wu Yan Rongliang. Effects of ionizing radiation on breakdown voltage for high voltage offset-gated PMOSFETs[J]. Nuclear techniques, 1993, (1): 1-5.
Gao Wenyu Ren Diyuan Lu Wu Yan Rongliang. Effects of ionizing radiation on breakdown voltage for high voltage offset-gated PMOSFETs[J]. Nuclear techniques, 1993, (1): 1-5.DOI:
Ionizing radiation responses of breakdown voltage are studied for the high voltage offset- gated P- channel MOSFETs. It is shown that the variation of breakdown voltage after irradiation results from the charges induced by irradiation near the field SiO2/ Si interface. The ionizing radiation hardening methods for this kind of devices are proposed. The annealing effects on breakdown voltage are also investigated.