The defects induced by 1.5 and 9.0 MeV electron and 2.0 MeV hydrogen ion at Si-SiO2 interface and in bulk P-type Si of MOS were investigated by using DLTS （Deep Level Transient Spectroscopy）

XPS（X-rayPhotoelectron Spectroscopy）and AES （Auger Electron Spectroscopy） techniques. Some new interface states and two bulk defects as HT1 （EV + 0.18eV

σP=2.8×10-16cm2） and HT2 （Ev+0.36eV

σp=3.3×10-17cm2） were found after e- and H+ irradiation. All the defects survive at RT. and after dynamic annealing

and capacitance of MOS was of failure when dose ofH+ ions was greater than 1 × 1014/cm2. Based on the profiles of defects observed

distribution of H+ in Si

and behaviour of annealing and Si atoms displacement It can be concluded that the two "hole traps" in the lower half of the band gap are mainly related to divacancy [V2]

[SiH-VF] complex center and the damages of displacement atom SiD

but weakly related to energy deposition for H+ in silicon.