The Si/SiO2 system

prepared by reinforcement and non reinforcement craft against irradiation and irradiated with 60Co

was investigated with the depth dissection method of XPS. The experimental results indicate that 1) the interface of non reinforced samples was wider than that of reinforced ones ; 2) the interface of the samples with lower contentration of substrate impurity was narrower than that of the samples with higher concentration; 3) appearance of the highest density of transition state of silicon for irradiated samples had a lag behind non irradiated samples; 4) appeanance of the above highest density for reinforced samples was later than that for non reinforced samples; 5) appeaaranel of the above highest density for the samples with higher concentration of substrate impurity was earlier than that for the samples with lower concentration; and 6) the transition thickness of surplus oxygen was thiner than that of transition state of silicon. Finally

according to the experimental results a revised three layer model of Si/SiO2 was suggested.