In this study

molecular dynamics simulations were performed to investigate temperature effects of SiF

3

+

bombarding SiC surfaces at the incident energy of 150 eV.The improved Tersoff-Brenner type potential energy function for the Si-C-F system was chosen.The simulation results show that all incident SiF

3

+

dissociate and most dissociated products deposit on the surface.A Si

x

C

y

F

z

reactive layer is formed by SiF

3

+

continuously bombarding. The etch yield of Si atoms is higher than that of C atoms in SiC.This is in good agreement with experimental data. When etching of C and Si reaches steady state at 300

500

700 and 900 K

the etching yields of Si are about 0.061

0.080

0.085 and 0.104

respectively

and the etching yields of C are about 0.019

0.030

0.034 and 0.039

respectively. In the etching products

SiF

2

species are dominant Si-containing products

and Si

x

F

y

C

z

is dominant C-containing products.Most etching products are produced by chemical-enhanced physical sputtering.