An accelerator-TEM interface facility has been established at Wuhan University in 2008.The system consists of an H800 TEM linked to a 200 kV ion implanter and a 2×1.7 MV tandem accelerator.Nitrogen ions at 115 keV were successfully transported from the implanter into the TEM chamber through the interface system

and the ion currents measured at the entrance of the TEM column were between 20 and 180 nA.Structural evolution caused by ion irradiation in Si

GaAs

nanocrystal Ag was observed in situ.The in situ observation showed that the critical implantation dose for amorphization of Si is 10

14

cm

-2

.The nuclear material C276 samples implanted with 115 keV Ar

+

was also studied

and dislocation loops sized at 3-12 nm were clearly observed after implantation to doses of over 1×10

15

cm

2

.The density of the loops increased with the dose.Evolution to polycrystalline and amorphous structures were observed at 5×l0

15

cm

-2

and 3×10

16

cm

2

respectively.An in situ RBS/C chamber was installed on the transport line of the accelerator-TEM interface system.This enables in situ measurement of composition and location of the implanted species in lattice of the samples.In addition

a 50 kV low-energy gaseous ion generator was installed close to the TEM chamber

which facilitates in situ TEM observation of helium bubbles formed in helium-implanted materials.