High-or low-dose-rate irradiation was performed on JFET-input operational amplifiers(op-amps) under normal operating or zero-biased conditions.The results show that operational conditions have a great influence on the radiation effects and damage to JFET-input operational amplifiers.Under normal condition

the JFET-input op-amps exhibited time-dependent effect(TDE);while they show enhanced low-dose-rate sensitivity(ELDRS) at zero-biased condition.Compared with zero-biased condition

the JFET-input op-amps degrade more severely at normal condition for high-dose-rate irradiation;while for the low-dose-rate case

they degraded more at normal condition.Irradiation would induce positive oxide-trapped charge and interface traps in bipolar transistors

which are the basic components in JFET-input op-amps.From the dependence of oxide trapped charge and interface traps on operational conditions

the degradation behavior is discussed.