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1. 哈尔滨工业大学现代焊接生产技术国家重点实验室
2. 哈尔滨工业大学高性能计算中心
纸质出版日期:2009-06-01
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[1]陆洋,王浪平,王小峰,于永澔,黄磊,谢志文.高压脉冲辉光放电内表面注入及等离子体特征研究[J].核技术,2009,32(06):431-434.
LU Yang1 WANG Langping1 WANG Xiaofeng2 YU Yonghao1 HUANG Lei1 XIE Zhiwen1 1. Plasma characteristic of high voltage pulsed glow discharge and ion implantation for inner surface modification[J]. Nuclear techniques, 2009, 32(6): 431-434.
[1]陆洋,王浪平,王小峰,于永澔,黄磊,谢志文.高压脉冲辉光放电内表面注入及等离子体特征研究[J].核技术,2009,32(06):431-434. DOI:
LU Yang1 WANG Langping1 WANG Xiaofeng2 YU Yonghao1 HUANG Lei1 XIE Zhiwen1 1. Plasma characteristic of high voltage pulsed glow discharge and ion implantation for inner surface modification[J]. Nuclear techniques, 2009, 32(6): 431-434. DOI:
为了提高内表面注入的剂量及深度均匀性
作者将脉冲高压辉光放电机制引入到内表面改性的研究中。利用发射光谱法及静电探针法对该方法获得的离子体参数进行了诊断
并在特定的内筒中采用氮气为工作气
进行了离子注入实验。结果显示
采用这种方法可以在内筒获得连续存在的等离子体。Ar等离子中含有大量激发态原子
而N等离子体中N2+离子占离子数量的绝大多数。等离子密度随着电压的提高显著提高
当电压从10kV增加到15kV时
Ar等离子体中离子密度增加约4倍
N等离子中离子密度增加约2倍。内表面获得均匀性良好的改性层
对于直径56mm的圆筒在电压20kV、气压1.5Pa条件下注入深度达到16.9nm
剂量均匀性可达到87.3%。
High voltage pulsed glow discharge was introduced into the research of inner surface modification to improve the uniformity of implantation dose and depth.The plasma parameter was studied by probe and OES.Ion implantation was performed in a special tube under nitrogen atmosphere.The results showed that continuous plasma could be obtained on the inner surface
and atom in excitation was the majority state in the argon plasma while the N2+ was the majority in the nitrogen plasma.The plasma density increased with the voltage.At 10?15 kV
the argon plasma density increased by about 4 times and the nitrogen plasma density increased by 2 times.Uniform modification layer was obtained on the inner surface of a cylinder of Φ56 mm.The depth reached 16.9 nm and the dose homogeneity was 87.34% at 15 kV and 1.5 Pa.
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