GaN films were grown by intermediate-frequency magnetron sputtering of pure Ga metal target on Si(111) substrate. The properties and the contents of GaN films were analyzed by X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopy (EDS)

respectively. The relationships between the total gas pressure

the substrate position and temperature

and crystallization quality and element contents of the GaN films

were investigated. The results showed that preferred orientation of GaN (002) was achieved at total gas pressures of 0.4～1.0 Pa. Little diffraction of GaN (002) could be observed either at pressures below 0.4 Pa or above 1.0 Pa. The Ga:N ratio was 1:1 for films prepared under the optimized conditions.