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1. 中国科学院上海应用物理研究所
2. 丹麦科技大学
纸质出版日期:2008-06-01
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[1]朱伟忠,吴衍青,史沛熊,郭智,邰仁忠,徐洪杰.基于高级硅刻蚀和硅氧化工艺的软X射线干涉光刻分束光栅的优化设计[J].核技术,2008(06):415-419.
ZHU Weizhong1 WU Yanqing1 SHI Peixiong2 GUO Zhi1 TAI Renzhong1 XU Hongjie1 1. An optimized design of the XIL beam splitter grating combining advanced silicon etching with silicon oxidation technology[J]. Nuclear techniques, 2008, (6): 415-419.
[1]朱伟忠,吴衍青,史沛熊,郭智,邰仁忠,徐洪杰.基于高级硅刻蚀和硅氧化工艺的软X射线干涉光刻分束光栅的优化设计[J].核技术,2008(06):415-419. DOI:
ZHU Weizhong1 WU Yanqing1 SHI Peixiong2 GUO Zhi1 TAI Renzhong1 XU Hongjie1 1. An optimized design of the XIL beam splitter grating combining advanced silicon etching with silicon oxidation technology[J]. Nuclear techniques, 2008, (6): 415-419. DOI:
基于严格的矢量耦合波方法
对13.4nm(92.5eV)软X射线正入射于周期140nm的Si光栅和SiO2光栅的一级衍射效率进行了模拟计算
结果表明SiO2光栅的最大一级衍射效率远比Si光栅高
同时也比目前用于13.4nm软X射线干涉光刻的Cr/Si3N4复合光栅高。本文提出用高级硅刻蚀工艺和硅氧化工艺制作深高宽比纳米级SiO2光栅的新方法
可以解决直接刻蚀制作此光栅难度大的问题
适用于制作上海光源(SSRF)软X射线干涉光刻分束光栅。
In this paper
diffraction efficiency of SiO2 gratings was calculated based on the rigorous coupled-wave analysis
with normal incidence of a 13.4 nm(92.5 eV) EUV light on a grating of 140 nm period.It was found that the maximal first order diffraction efficiency of the SiO2 grating was much higher than the Si grating
and higher than the Cr/Si3N4 compound gratings currently used at PSI.A new method
which combines advanced silicon etching with silicon oxidation technology
was employed to make the SiO2 nano-grating with high aspect ratio.This method
for making the beam splitter grating especially
solves the problem of direct SiO2 etching and will be used for the soft X-ray interference lithography endstation at SSRF.
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