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1. 中国科学院上海光学精密机械研究所
2. 中国科学院高能物理研究所,上海,201800
3. ,北京,100039
纸质出版日期:2002-10-01
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[1]赵广军,李涛,何晓明,徐军,田玉莲,黄万霞.高温无机闪烁晶体Ce:YAlO_3的缺陷研究[J].核技术,2002(10):869-872.
ZHAO Guangjun 1 LI Tao 1 HE Xiaoming 1 XU Jun 1 TIAN Yulian 2 HUANG Wanxia 2 1. Investigation on defects in the high temperature inorganic scintillation single crystals of Ce:YAlO3[J]. Nuclear techniques, 2002, (10): 869-872.
[1]赵广军,李涛,何晓明,徐军,田玉莲,黄万霞.高温无机闪烁晶体Ce:YAlO_3的缺陷研究[J].核技术,2002(10):869-872. DOI:
ZHAO Guangjun 1 LI Tao 1 HE Xiaoming 1 XU Jun 1 TIAN Yulian 2 HUANG Wanxia 2 1. Investigation on defects in the high temperature inorganic scintillation single crystals of Ce:YAlO3[J]. Nuclear techniques, 2002, (10): 869-872. DOI:
采用同步辐射白光透射形貌术研究了提拉法生长的高温无机闪烁晶体Ce:YAlO3(简称Ce:YAP)中的缺陷。实验发现在Ce:YAP晶体中存在着生长条纹、包裹沉积物、核心、孪晶及位错簇等缺陷
同时对生长缺陷形成的原因进行了讨论。结果表明
离子掺杂浓度、原料的纯度以及生长工艺条件等是影响Ce:YAP晶体缺陷的主要原因
The defects in Ce:YAlO 3 single crystals grown by Czochralski method were investigated by transmission white beam synchrotron radiation topography method. It was shown in experiments that the growth striations
inclusions precipitations
twins
core and dislocation group were the main growth defects in Ce:YAP single crystals. The mechanism of the defects formation was also discussed in the paper. The results showed that the doped concentration
purity of starting materials and growth conditions are the main causes for defects formation in Ce:YAP single crystals.
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