The Single Event Effect(SEE) simulation experiment was carried out on proton accelerators for Static Random Access Memories(SRAMs). A gold foil was used to scatter the proton beam so that it was suitable for proton SEE experiment. A system was designed for measuring the very low proton beam on devices. The Single Event Upest(SEU) cross section is of the order of 10-14 cm2/bit for SRAMs under proton irradiation. The SEU effect experiments were performed by using heavy ion accelerator and 252Cf source

too. The relation between SEU cross section and heavy ion Linear Energy Transfer(LET) was studied. The SEU heavy ion LET thresholds and the saturation SEU cross sections were obtained. Result on the saturation SEU cross sections were the same for using heavy ion accelerator or using 252Cf source. Therefore it is suitable to measure the saturation SEU cross section for SRAMs using 252Cf source instead of heavy ion accelerator. Heavy ion micro-beam SEE experiment was firstly performed and the SEU sensitive regions were found for SRAM produced in China. The SEE experiments were performed on neutron 14MeV generator and the SEU cross sections were obtained for SRAMs

too. To compare the ability of three different memories against soft errors

alpha particles’ irradiation experiments were done to simulate the alpha particles emitted from 232Th and 238U in encapsulation material. Soft errors are measured and the cross sections of SEU and Failures in Time(FIT) are calculated. Alpha particles’ irradiation experiments for routers were also done and the errors in natural environment were duplicated.