离子辐照后4H-SiC晶体退火前后的光谱研究

周丽宏; 张崇宏; 杨义涛; 宋银; 姚存峰

doi:null

您当前的位置：

首页 >

文章列表页 >

离子辐照后4H-SiC晶体退火前后的光谱研究

更新时间：2021-03-12

- 离子辐照后4H-SiC晶体退火前后的光谱研究
- FTIR and Raman spectra of ion irradiated and annealed 4H-SiC
- 核技术 2007年第4期
- 作者机构：
  
  1. 中国科学院近代物理研究所
  2. 中国科学院研究生院北京,100049
  3. 中国科学院研究生院北京100049,兰州,730000
- 作者简介：
- 基金信息：
  
  (No.ZX069)
- DOI：
  中图分类号： O433
- 纸质出版日期：2007-04-01
- 稿件说明：
移动端阅览
[1]周丽宏,张崇宏,杨义涛,宋银,姚存峰.离子辐照后4H-SiC晶体退火前后的光谱研究[J].核技术,2007(04):314-317.

ZHOU Lihong1, 2 ZHANG Chonghong1 YANG Yitao1, 2 SONG Yin1 YAO Cunfeng1, et al. FTIR and Raman spectra of ion irradiated and annealed 4H-SiC[J]. Nuclear techniques, 2007, (4): 314-317.
[1]周丽宏,张崇宏,杨义涛,宋银,姚存峰.离子辐照后4H-SiC晶体退火前后的光谱研究[J].核技术,2007(04):314-317. DOI：

ZHOU Lihong1, 2 ZHANG Chonghong1 YANG Yitao1, 2 SONG Yin1 YAO Cunfeng1, et al. FTIR and Raman spectra of ion irradiated and annealed 4H-SiC[J]. Nuclear techniques, 2007, (4): 314-317. DOI：

摘要

分析了高能Pb27+辐照预注入12C+的和未预注入12C+ 4H-SiC样品在

退火前后傅立叶变换红外光谱和拉曼散射光谱的变化。从傅立叶变换红外光谱可以知道

900℃以上的退火使损伤层发生显著恢复;在拉曼散射光谱中可以看到1200℃退火后有石墨相的存在。实验结果说明

高温退火有利于损伤的恢复

使注入到碳化硅中的碳原子发生聚集并引起相变。

Abstract

The 4H-SiC specimens were implanted with 110keV C-ions and then irradiated with 230MeV Pb-ions and subsequently annealed at different temperatures in vacuum. The samples were investigated after each annealing stage by using FTIR and Raman spectroscopy. The obtained FTIR spectra showed several interference fringes in the range from 960 cm-1 to 1450 cm-1. The intensity of fringes decreases with the increase of annealing temperature

and an abrupt decrease of the fringe intensity was found for annealing above 900oC

indicating that there was a significant recovery of the irradiation-induced damage in the crystal for annealing at high temperatures. The Raman spectroscopy showed that after annealing at 1200 ℃ for 30 min the amorphous layer was recovered and the precipitation of carbon atoms in graphite occurred.

关键词

Keywords

references

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

注F⁺NMOSFET的电离辐照与退火特性

降低晶体管h_FE值的电子束辐照工艺的研究

离子注入与离子束混合两用机

燃料元件基体石墨Xe离子辐照缺陷的慢正电子束研究

4H-SiC探测器的快中子产额测量可行性研究