Cubic boron nitride (c-BN) films were deposited on the high speed steel (HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by IR

XPS and AFM. The experiment results show that the implantation of boron ions into silicon substrate can reduce the internal stress of films

and when the boron dose is appropriate

the implantation of boron into HSS substrate will be helpful to synthesize c-BN phase and reduce the internal stress of films. AFM shows that the surface roughness of the c-BN film on the implanted HSS is lower and the grain size is smaller. Besides

the phase structure of the boron implanted layer was analyzed by XPS

and the influence of boron implanted layer on the growth of c-BN films was investigated.