By magnetosputting technique

we have fabricated a series of NiO-containing Co/Cu/Co spin valves. Electromagnetic transport measurements show that the thermal stability behavior for NiO being on the top of the spin valve (TSV) is different from that for NiO being under the bottom of the spin valve (BSV). X-ray reflectivity and X-ray transverse diffuse scattering studies show that the interface roughness and the coupling between NiO layer and Co layer are two competitive factors in determining the MR effect of the NiO containing Co/Cu/Co spin valves. From this point of view

we have designed another sets of samples with varying growth parameters and the MRs reach to a nearly double value

i.e.

-12% for BSV. The MR of symmetric spin valve is increased to 15%.