ZnO is a II-VI compound with a wide direct gap of about 3.37eV at room temperature. It is an important compound for information techniques. The ZnO thin films are deposited on Si (100) substrate by molecular beam epitaxy (MBE) associated with oxygen atmosphere method

under different temperatures of molecular beam source and substrate. The Zn buffer layer is used in order to minimize the effect of mismatch of crystal lattice between Si and ZnO. In the X-ray diffraction spectrum of ZnO/Zn/Si (100)

peaks specific to ZnO at (100)

(002)

(101)

(102) and (103) were observed. Images from the atomic force microscope show that the ZnO films are composed of small granules with the size of 80-90nm approximately. The local structure of ZnO films has been studied by the synchrotron radiation EXAFS technique. Some local structural parameters such as bond length

coordination number and disorder degree are obtained for the first shell. We suggest that the disorder of as grown ZnO films be probably due to the existence of hanging bonds on the surface of ZnO nanometer granules.