In this paper

we report the progress on energy band structure studies of wide-band-gap semiconductors in NSRL. The energy band structure of ZnO and its native point defects have been calculated by using FP-LMTO method for the first time. We confirmed theoretically that Zn is the main factor to induce the native n-type conductiv-ity in ZnO

which effects on the spectral properties of ZnO are also discussed. The energy band dispersion of both bulk and surface states on wurtzite GaN(0001) has been studied by using synchrotron radiation angle resolved photo-electron spectroscopy (SRARPES). A theoretical calculation of the atomic and electronic structure of β-SiC(110) surface is also presented by using FPLAPW method for the first time. The results show that the surface is char-acterized by a top-layer bond-length-contracting rotation relaxation and the surface relaxation induces the change from metallic to semiconducting characterization.