The microstructure and composition depth profiles of N+-implanted Al specimens were investigated by means of glancing angle X-ray diffraction and Auger electron spectroscopy

and the nitrogen distribution in Al after the ion implantation was also simulated utilizing TRIM?8 code. The results showed the formation of hexagonal AlN rather than cubic AlN at temperature below 300℃ for the Al specimens implanted with fluences of 7?017/cm2 and 1?018/cm2 at 60keV. The results also suggested that the collision diffusion dominated the nitrogen implantation process while both thermal diffusion and radiation enhanced diffusion were weak.