Mo silicides with good properties were synthesized by using metal Mo ion implantation with large ion flux. It was found that the Mo silicides grown up and sheet resistance Rs decreased with increasing ion flux. The minimum Rs of 90Ω was obtained when the ion flux of 0.5A/m2 was used

it indicated that continuos layer of Mo silicides were formed. X-ray diffraction analysis showed that three kinds of Mo silicides of Mo3Si

Mo5Si3 and MoSi2 were formed in Mo implanted silicon. The quality of the silicides was improved further after annealing

if the sample was annealed at 900－℃ for 20s

the Rs decreased to 4Ω

the resistivity was 0.16 μΩ·m. TEM observation showed that the depth of continuos layer of Mo silicides was about 80nm