The formation of boron nitride thin films on silicon wafer by ion beam assisted deposition was studied. The experimental study on energy and current of the assisted ion beam and on the percentage of nitrogen in the bombarding gas was carried out. The thin films were analyzed by infrared spectroscopy and X-ray photoelectron spectroscopy. The results show that the c-BN percentage in the films increases with the percentage of nitrogen in the bombarding gas and the c-BN percentage increases when ion beam energy is appropriate

and that ion beam current in the experiment has only little influence on the synthesis of the c-BN thin films.