
浏览全部资源
扫码关注微信
中国科学院上海应用物理研究所
纸质出版日期:2012-06-01
移动端阅览
[1]刘月,王廷栋,白凌志,程诚,张伟,怀平.T型半导体量子线的动态屏蔽效应[J].核技术,2012,35(06):467-471.
LIU Yue WANG Tingdong BAI Lingzhi CHENG Cheng ZHANG Wei HUAI Ping. Dynamical screening effects in T-shaped semiconductor quantum wire[J]. Nuclear techniques, 2012, 35(6): 467-471.
采用动态屏蔽库仑势计算了T型半导体量子线的载流子自能
讨论了电子、空穴的自能及其对量子线截面尺度的依赖关系。计算结果表明
准一维体系具有很强的量子限域效应
显著增强了载流子间的有效库仑作用。受电子间强烈散射的影响
动态屏蔽导致了电子能带重整化及寿命的很大变化。与准静态近似计算结果相比
动态屏蔽效应对空穴的影响较小。
In this paper
we study dynamical screening effects in T-shaped semiconductor quantum wire by Green’s Function theory at finite temperature.To clarify dynamical screening effects due to electron-hole plasma
the self-energy of T-shaped semiconductor quantum wire is calculated based on dynamically screened Coulomb potential.The energies of electron and hole
and the relation between the electron and hole energies and cross-section of quantum wire
are discussed.The results show that quasi-one-dimensional system has strong quantum confinement
which enhances the Coulomb interaction among carriers.Due to strong scattering among electrons
large band-gap renormalization effect and finite life-time of electrons are induced by dynamical screening effects.Compared to results by quasi static approximation
we find that holes are less affected by the dynamical screening effects.
0
浏览量
125
下载量
0
CSCD
关联资源
相关文章
相关作者
相关机构
京公网安备11010802024621