For studying single event effect of the high-voltage radiation-hardened power VDMOS devices

two types of N-channel power VDMOS devices of the breakdown voltage 400 V and 500 V for satellite applications

developed with radiation-hardened technology

were irradiated to 105 cm–2 by 255 MeV 127I ions at dose rate of 7×103 cm–2.s–1.Single event gate rupture(SEGR) effect of the power VDMOS devices was investigated.The results showed the power VDMOS devices were of better resistance to single event effect.No single event effects were found at the gate-source voltage of 0 V and the drain-source voltage of the breakdown voltage.The experimental results provided a reference for space application of the power VDMOS devices

and were of importance for further improvement of the design and for developments of the other types of radiation hardened VDMOS devices.