In this work

single event effects and total ionizing dose effects of typical VDMOSFET irradiated by 60Co γ-rays and 252Cf source were studied.The single event burnout and single event gate rupture(SEB/SEGR) effects were investigated

and the relationship between drain-source breakdown voltage and ionizing dose was obtained.The results showed that the VDMOSFET devices were sensitive to SEB and SEGR

and measures to improve their resistance to SEB and SEGR should be considered seriously for their space applications.The drain-source breakdown voltage was sensitive to total ionizing dose effects as the threshold voltage.In assessing the devices’ resistance to the total ionizing dose effects

both the threshold voltage and the drain-source breakdown voltage should be taken into account.