Amorphous SiO2 films of about 1 ?m in thickness were thermally grown on single crystalline silicon.The samples were implanted at room temperature(RT) with 120 keV C ions to doses ranging from 1.0 ? 1016 to 8.6 ? 1017 ions/cm2

and then irradiated at RT with 950 MeV Pb ions to 5.0? 1011

1.0 ? 1012 and 3.8 ? 1012 ions/cm2

respectively.Photoluminescence(PL) properties of the samples were investigated using a fluorescent spectroscopy at RT.The results show that Pb ion irradiation affected significantly the PL properties

which depended strongly on doses of the C ion implantation and Pb ion irradiation.For example

huge PL peaks at about 2.89 eV and 2.53 eV could be seen in PL spectra of the sample implanted with 5.0 ? 1011 C ions/cm2 and irradiated by 3.8 ? 1012 Pb ions/cm2.This suggests that micro-structure like 6H-SiC may be induced in the C ion-implanted and Pb ion-bombarded a-SiO2 films.It seems that special light emitters can be produced by combined ion implantation and irradiation

which is a useful way for synthesizing new type of SiO2-based light-emitting materials.