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中国科学院近代物理研究所
收稿日期:1985-10-13,
纸质出版日期:1986-11
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杨振国, 张天梅. 用分子电镀法制备109Cd X射线源[J]. 核技术, 1986,09(11):39-40,61.
Zhenguo Yang, Tianmei Zhang. Preparation of 109Cd X ray source by molecular plating method[J]. Nuclear techniques, 1986, 09(11): 39-40,61.
109
Cd X射线源是供油水分析仪测原油含水率用的。
109
Cd的半寿命为453天,它的衰变子体
109m
Ag发射22keV的X射线和88keV的γ射线,而能量为22keV的谱线的油水吸收系数相差较大,适用于油水分析仪测原油含水率。由于22keV的X谱线能量较低,为了尽量减少自吸收,要求源要薄而均匀,所以我们采用了电镀效率高、时间短,镀层薄而均匀、牢固的分子电镀法做源。测得源强为1×10
7
/s。
109
Cd is a radioisotope with a half-life of 453 days and its decay daughter
109m
Agemits 22 keV X ray and 88 keV
γ
ray. Since the absorption coefficients of the 22 keV X ray in water and oil are significantly different
the
109
Cd is very suitable X ray source as oil-water analyser for the determination of fraction of water contained in oil(water/oil ratio). Considering the rather low energy of 22 keV X ray
we used the molecular plating method which has the advantages of high deposition efficiency
and short deposition time. The plating layer are thin
uniform
less self absorption and strongly adhesive to the base material. The intensity of
109
Cd X ray source prepared is 1×10
7
/s.
马惠芳 和 杨振国 , 核技术 , 5 , 53 ( 1982 )。
D. C. Aumann and G. Müllen , Nucl. Instr. Meth. , 115 , 1 , 75 ( 1974 ).
W. Parker et al . , Nucl. Instr. Meth , 26 , 314 ( 1964 ).
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