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中国原子能科学研究院
纸质出版日期:1988-09
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郝秀红, 郭士伦. Makrofol薄膜蚀刻特性研究[J]. 核技术, 1988,11(9):15-16.
Xiuhong Hao, Shilun Guo. Study on etching behavior of makrofol film[J]. Nuclear techniques, 1988, 11(9): 15-16.
本文研究了Makrofol KG膜的总体蚀刻特性。研究结果表明,体蚀刻速度与蚀刻温度遵守Arr-henius方程
V
b
=a•
e
-
E
/
KT
,其中,体激活能
E
=0.66±0.02eV。体蚀刻速度与蚀刻浓度的关系为
V
b
=
an
b
,在1—10mol/l NaOH溶液中,
b
=2.02。
The bulk etching behavior of makrofol KG film has been studied. It is shown that the bulk etching rate as a function of etching temperature can be described by Arrhenius equation
V
b
=
ae
-E/KT
.
The activation energy for bulk etching is
E
=0.66±0.02eV. The relation of the bulk etching rate to the concentration of etchant is
V
b
=
an
b
where
b
=2.02 for 1 to 10 mol/l NaOH.
G. Somogyi and I. Hunyadi , Nucl. Tracks , ( 1979 ), 2 : 443 .
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